Invention Application
- Patent Title: Generation of a reference voltage
- Patent Title (中): 产生参考电压
-
Application No.: US11724474Application Date: 2007-03-15
-
Publication No.: US20070216472A1Publication Date: 2007-09-20
- Inventor: Hugo Gicquel , Jean-Luc Moro , Marc Sabut
- Applicant: Hugo Gicquel , Jean-Luc Moro , Marc Sabut
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Priority: FRFR06/50876 20060315
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A circuit of generation of a reference voltage by a first MOS transistor connected to a first terminal of application of a supply voltage, the first transistor being in series with a second MOS transistor controlled by an input stage of a transconductance amplifier and their junction point defining an output terminal providing the reference voltage, a first current source connecting the first supply terminal to a gate of the first transistor, a second current source connecting the second transistor to a second terminal of application of the supply voltage, at least one third MOS transistor connecting the two current sources, and a capacitive element directly connecting the output terminal to a conduction terminal of the third transistor to vary the conduction of this third transistor in case of a variation in output voltage.
Public/Granted literature
- US07525370B2 Circuits for generating a reference voltage Public/Granted day:2009-04-28
Information query
IPC分类: