Invention Application
- Patent Title: Non-volatile phase-change memory device and associated program-suspend-read operation
- Patent Title (中): 非易失性相变存储器件和相关的程序挂起读操作
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Application No.: US11486100Application Date: 2006-07-14
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Publication No.: US20070217253A1Publication Date: 2007-09-20
- Inventor: Hye-jin Kim , Kwang-jin Lee , Sang-Beom Kang , Mu-hui Park
- Applicant: Hye-jin Kim , Kwang-jin Lee , Sang-Beom Kang , Mu-hui Park
- Priority: KR10-2006-0024328 20060316
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.
Public/Granted literature
- US07349245B2 Non-volatile phase-change memory device and associated program-suspend-read operation Public/Granted day:2008-03-25
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