Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment.A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIa of the Periodic Table coated directly or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.