- 专利标题： Semiconductor device and method of manufacture thereof
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申请号： US11790033申请日： 2007-04-23
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公开(公告)号： US20070218605A1公开(公告)日： 2007-09-20
- 发明人: Yoshio Ozawa , Yasumasa Suizu , Yoshitaka Tsunashima
- 申请人： Yoshio Ozawa , Yasumasa Suizu , Yoshitaka Tsunashima
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 优先权： JP11-121689 19990428; JP2000-122018 20000424
- 主分类号： H01L21/765
- IPC分类号： H01L21/765
摘要：
A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode is formed on the gate electrode insulating film, and an oxidation process using ozone is performed to sufficiently round the shape of the lower edge of the gate electrode.
公开/授权文献
- US07312138B2 Semiconductor device and method of manufacture thereof 公开/授权日：2007-12-25
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