发明申请
- 专利标题： Charge trapping device and method of producing the charge trapping device
- 专利标题（中）： 电荷俘获装置及电荷俘获装置的制造方法
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申请号： US11390997申请日： 2006-03-27
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公开(公告)号： US20070221988A1公开(公告)日： 2007-09-27
- 发明人: Rainer Hagenbeck , Christoph Ludwig , Mark Isler , Elard Kamienski
- 申请人： Rainer Hagenbeck , Christoph Ludwig , Mark Isler , Elard Kamienski
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/00
摘要：
A charge-trapping device includes a field effect transistor, which has source and drain regions. The source and drain regions have a dopant concentration profile, which has a gradient each in a vertical and a lateral direction with respect to a surface of a semiconductor substrate. The gradient in the lateral direction towards a depletion region of the transistor is larger than the gradient in the vertical direction towards a well region.
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