- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US11802684申请日： 2007-05-24
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公开(公告)号： US20070222003A1公开(公告)日： 2007-09-27
- 发明人: Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Koichi Kato , Takashi Shimizu
- 申请人： Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Koichi Kato , Takashi Shimizu
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-030586 20050207
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.
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