发明申请
- 专利标题： CAPACITOR STRUCTURE
- 专利标题（中）： 电容结构
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申请号： US11456094申请日： 2006-07-07
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公开(公告)号： US20070222031A1公开(公告)日： 2007-09-27
- 发明人: Uei-Ming Jow , Chang-Sheng Chen , Ying-Jiunn Lai , Chin-Sun Shyu
- 申请人： Uei-Ming Jow , Chang-Sheng Chen , Ying-Jiunn Lai , Chin-Sun Shyu
- 申请人地址： TW Hsinchu
- 专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址： TW Hsinchu
- 优先权： TW95109607 20060321
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A capacitor structure with a cross-coupling design is provided. In the capacitor structure, conductive lines or electrode plates are coupled together by cross coupling an electrode above or below or aside the other electrode. By cross coupling and fewer vias, the largest capacitance value can be obtained within a minimum area. The capacitor structure provided can also be applied to a high-frequency high-speed module or system to enhance noise inhibition capability of a capacitive substrate.
公开/授权文献
- US07528433B2 Capacitor structure 公开/授权日：2009-05-05
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