发明申请
- 专利标题： STRUCTURE AND METHOD TO IMPROVE CURRENT-CARRYING CAPABILITIES OF C4 JOINTS
- 专利标题（中）： 提高C4接头电流承载能力的结构和方法
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申请号： US11308396申请日： 2006-03-21
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公开(公告)号： US20070222073A1公开(公告)日： 2007-09-27
- 发明人: Mukta Farooq , Jasvir Jaspal , William Landers , Thomas Lombardi , Hai Longworth , H. Pogge , Roger Quon
- 申请人： Mukta Farooq , Jasvir Jaspal , William Landers , Thomas Lombardi , Hai Longworth , H. Pogge , Roger Quon
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L29/40 ; H01L21/44
摘要：
A system and method comprises depositing a dielectric layer on a substrate and depositing a metal layer on the dielectric layer. The system and method further includes depositing a high temperature diffusion barrier metal cap on the metal layer. The system and method further includes depositing a second dielectric layer on the high temperature diffusion barrier metal cap and the first dielectric layer, and etching a via into the second dielectric layer, such that the high temperature diffusion barrier metal cap is exposed. The system and method further includes depositing an under bump metallurgy in the via, and forming a C4 ball on the under bump metallurgy layer.