发明申请
US20070222353A1 Device and method for achieving enhanced field emission utilizing nanostructures grown on a conductive substrate
失效
用于通过在导电基底上生长的纳米结构实现增强的场发射的装置和方法
- 专利标题: Device and method for achieving enhanced field emission utilizing nanostructures grown on a conductive substrate
- 专利标题(中): 用于通过在导电基底上生长的纳米结构实现增强的场发射的装置和方法
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申请号: US11651267申请日: 2007-01-09
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公开(公告)号: US20070222353A1公开(公告)日: 2007-09-27
- 发明人: Zhifeng Ren , Sung Jo , Debasish Banerjee
- 申请人: Zhifeng Ren , Sung Jo , Debasish Banerjee
- 专利权人: The Trustees of Boston College
- 当前专利权人: The Trustees of Boston College
- 主分类号: H01J1/02
- IPC分类号: H01J1/02
摘要:
A device and method is presented for achieving a high field emission from the application of a low electric field. More specifically, the device includes a substrate wherein a plurality of nanostructures are grown on the substrate. The relationship of the nanostructures and the substrate (the relationship includes the number of nanostructures on the substrate, the orientation of the nanostructures in relationship to each other and in relationship to the substrate, the geometry of the substrate, the morphology of the nanostructures and the morphology of the substrate, the manner in which nanostructures are grown on the substrate, the composition of nanostructure and composition of substrate, etc) allow for the generation of the high field emission from the application of the low electric field.
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