发明申请
US20070224107A1 Method of Manufacturing Carbon Nanostructure 有权
制造碳纳米结构的方法

  • 专利标题: Method of Manufacturing Carbon Nanostructure
  • 专利标题(中): 制造碳纳米结构的方法
  • 申请号: US11587212
    申请日: 2005-01-28
  • 公开(公告)号: US20070224107A1
    公开(公告)日: 2007-09-27
  • 发明人: Takeshi Hikata
  • 申请人: Takeshi Hikata
  • 申请人地址: JP OSAKA 541-0041
  • 专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
  • 当前专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
  • 当前专利权人地址: JP OSAKA 541-0041
  • 优先权: JP2004-128231 20040423; JP2004-220432 20040728
  • 国际申请: PCT/JP05/01259 WO 20050128
  • 主分类号: C01B31/02
  • IPC分类号: C01B31/02 B82B3/00
Method of Manufacturing Carbon Nanostructure
摘要:
A method of manufacturing carbon nanostructures that allows carbon nanostructures having more uniform shape to be produced in high purity and in a stable manner is provided. The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by means of vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.
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