发明申请
- 专利标题： Semiconductor device fabrication method
- 专利标题（中）： 半导体器件制造方法
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申请号： US11798956申请日： 2007-05-18
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公开(公告)号： US20070224749A1公开(公告)日： 2007-09-27
- 发明人: Takeshi Hoshi , Masahiro Kiyotoshi
- 申请人： Takeshi Hoshi , Masahiro Kiyotoshi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-33351 20050209
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
According to the present invention, there is provided a semiconductor device fabrication method having: coating a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film; forming a polysilazane film by volatilizing the solvent by heat-treating the coating film; and inserting the semiconductor substrate into a predetermined furnace, lowering a pressure in the furnace, and oxidizing the polysilazane film while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.
公开/授权文献
- US07598151B2 Semiconductor device fabrication method 公开/授权日：2009-10-06
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