公开(公告)号：US20120034754A1

公开(公告)日：2012-02-09

申请号：US13272457

申请日：2011-10-13

申请人： Kazuaki Iwasawa ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Shogo Matsuo ,  Takashi Nakao ,  Ryu Kato ,  Tetsuya Kai ,  Katsuyuki Sekine

发明人： Kazuaki Iwasawa ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Shogo Matsuo ,  Takashi Nakao ,  Ryu Kato ,  Tetsuya Kai ,  Katsuyuki Sekine

IPC分类号： H01L21/76

CPC分类号： H01L21/76229

摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.

摘要翻译： 半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面 所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理 温度以在元件隔离槽内形成被覆氧化硅膜。

公开(公告)号：US08080463B2

公开(公告)日：2011-12-20

申请号：US12691483

申请日：2010-01-21

申请人： Kazuaki Iwasawa ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Shogo Matsuo ,  Takashi Nakao ,  Ryu Kato ,  Tetsuya Kai ,  Katsuyuki Sekine

发明人： Kazuaki Iwasawa ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Shogo Matsuo ,  Takashi Nakao ,  Ryu Kato ,  Tetsuya Kai ,  Katsuyuki Sekine

IPC分类号： H01L21/76

CPC分类号： H01L21/76229

摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.

摘要翻译： 半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面 所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理 温度以在元件隔离槽内形成被覆氧化硅膜。

公开(公告)号：US20110284508A1

公开(公告)日：2011-11-24

申请号：US13111211

申请日：2011-05-19

申请人： Takahiro Miura ,  Setsu Yamamoto ,  Takeshi Hoshi ,  Tsuyoshi Ogawa ,  Yoshihiro Fujita ,  Shozo Hirano ,  Kazumi Watanabe ,  Satoshi Nagai ,  Masahiro Yoshida ,  Jun Semboshi ,  Satoru Asai ,  Makoto Ochiai

发明人： Takahiro Miura ,  Setsu Yamamoto ,  Takeshi Hoshi ,  Tsuyoshi Ogawa ,  Yoshihiro Fujita ,  Shozo Hirano ,  Kazumi Watanabe ,  Satoshi Nagai ,  Masahiro Yoshida ,  Jun Semboshi ,  Satoru Asai ,  Makoto Ochiai

IPC分类号： B23K26/00

CPC分类号： B23K31/125

摘要： A welding system has: a welding mechanism, a reception laser light source, a reception optical mechanism, an interferometer, a data recording/analysis mechanism and a data recording/analysis mechanism. The reception laser light source generates reception laser light so as to irradiate the object to be welded with the reception laser light for the purpose of detecting a reflected ultrasonic wave obtained as a result of reflection of a transmission ultrasonic wave. The reception optical mechanism transmits, during or after welding operation, the reception laser light generated from the reception laser light source to the surface of the object to be welded for irradiation while moving, together with the welding mechanism, relative to the object to be welded and collects laser light scattered/reflected at the surface of the object to be welded.

摘要翻译： 焊接系统具有：焊接机构，接收激光光源，接收光学机构，干涉仪，数据记录/分析机构和数据记录/分析机构。 为了检测作为发送超声波的反射而得到的反射超声波，接收激光光源产生接收激光以照射被接收激光的被焊物体。 接收光学机构在焊接操作期间或之后将从接收激光光源产生的接收激光与焊接机构相对于被焊接物体一起移动而被发射到被焊接物体的表面 并收集在待焊接物体的表面上散射/反射的激光。

公开(公告)号：US07351670B2

公开(公告)日：2008-04-01

申请号：US11020712

申请日：2004-12-23

申请人： Takeshi Hoshi ,  Tsuyoshi Saito ,  Takako Kimura ,  Christian Dussarrat ,  Kazutaka Yanagita

发明人： Takeshi Hoshi ,  Tsuyoshi Saito ,  Takako Kimura ,  Christian Dussarrat ,  Kazutaka Yanagita

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  H01L21/3185

摘要： Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).

摘要翻译： 在LPCVD工具中，在安装在船上的硅晶片上形成硅氮化物膜，该硅源通过馈送硅源（SiH 2 2 Cl 2 Si 2 Si 3 S 2， >，Si 2 C 6 C 6等），并将一甲胺（CH 3 N 2 NH 2）的混合气体进料， / NH 3）和氨（NH 3 N 3）作为来自注射器的氮源。 通过将这种单甲胺添加到用于薄膜生产的源物质中，即使在低温（450-600℃）下也可以提供改进的膜质量和改善的泄漏特性。

公开(公告)号：US08329553B2

公开(公告)日：2012-12-11

申请号：US12730099

申请日：2010-03-23

申请人： Shogo Matsuo ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Kazuaki Iwasawa

发明人： Shogo Matsuo ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Kazuaki Iwasawa

IPC分类号： H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/02343 ,  H01L21/3081 ,  H01L21/3124 ,  H01L21/3125 ,  H01L21/316 ,  H01L27/11531 ,  H01L27/11543 ,  H01L27/11548

摘要： A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.

摘要翻译： 半导体器件的制造方法在半导体衬底上形成具有至少两种纵横比的多个沟槽，用包含硅的涂层材料填充多个沟槽，在沟槽的一部分中在涂层材料上形成掩模 在填充有涂层材料的多个沟槽中，将用于加速氧化涂层材料的离子注入到未形成掩模的沟槽中的涂层材料中，通过氧化其中离子的涂层材料形成第一绝缘膜 在移除掩模之后从沟槽的一部分去除涂层材料，并在去除涂层材料的沟槽部分中形成第二绝缘膜。

公开(公告)号：US07598151B2

公开(公告)日：2009-10-06

申请号：US11798956

申请日：2007-05-18

申请人： Takeshi Hoshi ,  Masahiro Kiyotoshi

发明人： Takeshi Hoshi ,  Masahiro Kiyotoshi

IPC分类号： H01L21/76

CPC分类号： C23C18/125 ,  C23C18/06 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1275 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/3141 ,  H01L21/31612

摘要： According to the present invention, there is provided a semiconductor device fabrication method having:coating a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film;forming a polysilazane film by volatilizing the solvent by heat-treating the coating film; andinserting the semiconductor substrate into a predetermined furnace, lowering a pressure in the furnace, and oxidizing the polysilazane film while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.

摘要翻译： 根据本发明，提供了一种半导体器件制造方法，其具有：通过将硅氮烷二酸酐聚合物分散在含有碳的溶剂中而制备的硅氮烷聚合物溶液涂覆半导体衬底，从而形成涂膜; 通过对涂膜进行热处理使溶剂挥发而形成聚硅氮烷膜; 并且将半导体衬底插入预定的炉中，降低炉中的压力，并且通过向炉中供应蒸汽来升高炉中的压力来氧化聚硅氮烷膜，由此形成氧化硅膜。

公开(公告)号：US07407864B2

公开(公告)日：2008-08-05

申请号：US11175305

申请日：2005-07-07

申请人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

发明人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

IPC分类号： H01L21/76

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/316 ,  H01L21/76224

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚 具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅 元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

公开(公告)号：US07306985B2

公开(公告)日：2007-12-11

申请号：US10916457

申请日：2004-08-12

申请人： Takaoki Sasaki ,  Takeshi Hoshi

发明人： Takaoki Sasaki ,  Takeshi Hoshi

IPC分类号： H01L21/8238

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31645 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A gate insulating film having an insulating film that contains at least nitrogen is formed on a substrate, and the gate insulating film is subjected to heat treatment for about 500 milliseconds or less using a flash lamp. Thereafter, a gate electrode is formed on the gate insulating film. Specifically, for example, a laminated film of SiO2 film and an SixN(1-x) film, a laminated film of an SiO2 film, HfSiO film, and an SixN(1-x) film, or the like, is formed in forming the gate insulating film.

摘要翻译： 在基板上形成具有至少含有氮的绝缘膜的栅极绝缘膜，使用闪光灯对栅极绝缘膜进行约500毫秒以下的热处理。 此后，在栅极绝缘膜上形成栅电极。 具体地，例如，SiO 2膜和Si x N（1-x）膜的层叠膜， SiO 2膜，HfSiO膜和Si x N N 1（1-x）/ ...膜等形成在栅极上 绝缘膜。

公开(公告)号：US20060205165A1

公开(公告)日：2006-09-14

申请号：US11175305

申请日：2005-07-07

申请人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

发明人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

IPC分类号： H01L21/76

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/316 ,  H01L21/76224

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚 具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅 元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

公开(公告)号：US20060022228A1

公开(公告)日：2006-02-02

申请号：US11038165

申请日：2005-01-21

申请人： Takeshi Hoshi ,  Tsuyoshi Saito ,  Hitoshi Kato ,  Koichi Orito

发明人： Takeshi Hoshi ,  Tsuyoshi Saito ,  Hitoshi Kato ,  Koichi Orito

IPC分类号： H01L29/78 ,  H01L21/4763

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45527 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/8238 ,  H01L21/823864 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.

摘要翻译： 制造在衬底表面上形成氮化硅膜的氮化硅膜的方法包括顺序地重复第一至第三步骤。 第一步包括将含有硅和氮的第一气体进料到基材的表面。 第二步骤包括将含有氮气的第二气体进料到基材的表面。 第三步骤包括将含有氢的第三气体进料到基材的表面。