发明申请
- 专利标题: Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
- 专利标题(中): 柱结构,半导体器件和使用该结构的发光器件及其形成方法
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申请号: US11709153申请日: 2007-02-22
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公开(公告)号: US20070224831A1公开(公告)日: 2007-09-27
- 发明人: Duk Kyu Bae
- 申请人: Duk Kyu Bae
- 申请人地址: KR Seoul KR Seoul
- 专利权人: LG Electronics Inc.,LG INNOTEK CO., LTD.
- 当前专利权人: LG Electronics Inc.,LG INNOTEK CO., LTD.
- 当前专利权人地址: KR Seoul KR Seoul
- 优先权: KR10-2006-0026632 20060323
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.