发明申请
US20070224831A1 Post structure, semiconductor device and light emitting device using the structure, and method for forming the same 有权
柱结构,半导体器件和使用该结构的发光器件及其形成方法

  • 专利标题: Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
  • 专利标题(中): 柱结构,半导体器件和使用该结构的发光器件及其形成方法
  • 申请号: US11709153
    申请日: 2007-02-22
  • 公开(公告)号: US20070224831A1
    公开(公告)日: 2007-09-27
  • 发明人: Duk Kyu Bae
  • 申请人: Duk Kyu Bae
  • 申请人地址: KR Seoul KR Seoul
  • 专利权人: LG Electronics Inc.,LG INNOTEK CO., LTD.
  • 当前专利权人: LG Electronics Inc.,LG INNOTEK CO., LTD.
  • 当前专利权人地址: KR Seoul KR Seoul
  • 优先权: KR10-2006-0026632 20060323
  • 主分类号: H01L21/302
  • IPC分类号: H01L21/302
Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
摘要:
A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.
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