发明申请
- 专利标题： SUBSTRATE THICKNESS MEASURING DURING POLISHING
- 专利标题（中）： 衬底厚度测量在抛光期间
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申请号： US11748825申请日： 2007-05-15
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公开(公告)号： US20070224915A1公开(公告)日： 2007-09-27
- 发明人: Jeffrey David , Dominic Benvegnu , Harry Lee , Boguslaw Swedek , Lakshmanan Karuppiah
- 申请人： Jeffrey David , Dominic Benvegnu , Harry Lee , Boguslaw Swedek , Lakshmanan Karuppiah
- 主分类号： B24B49/12
- IPC分类号： B24B49/12
摘要：
A method for determining a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matching the spectra with indexes in a library and using the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.
公开/授权文献
- US07409260B2 Substrate thickness measuring during polishing 公开/授权日：2008-08-05
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