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发明申请
US20070228002A1 Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning 失效
用于sub 50nm线/空间图案的同时选择性聚合物沉积和蚀刻倍频

Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning
摘要：
First radicals and second radicals are simultaneous deposited into a space defined by two adjacent lines of photoresists and an underlying layer. A portion of the first radicals and the second radicals combine to form a polymer layer on the layer in the center of the space, and substantially simultaneously, another portion of thee first radicals remove the underlying layer near the base of the photoresists. The first radicals may be fluorine-rich and the second radicals may be carbon-rich.
摘要（中）：

第一自由基和第二自由基同时沉积到由两个相邻的光致抗蚀剂层和下层所限定的空间中。 第一自由基和第二自由基的一部分组合在该空间中心的层上形成聚合物层，并且基本上同时地，第一自由基的另一部分除去光致抗蚀剂基底附近的下层。 第一基团可以是富氟的，第二基团可以是富碳的。

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