Polymer spacer formation
    4.
    发明申请
    Polymer spacer formation 有权
    聚合物间隔物形成

    公开(公告)号:US20060154477A1

    公开(公告)日:2006-07-13

    申请号:US11034788

    申请日:2005-01-12

    申请人: Quain Geng Jeff Xu

    发明人: Quain Geng Jeff Xu

    IPC分类号: H01L21/4763

    摘要: A polymer spacer material may increase the dimensions of the patterned photoresist that is used as a mask to etch the layers below the photoresist, which in turn translates into smaller dimensions etched into the underlying materials. This allows for the formation of integrated circuits having smaller features, smaller overall size, and greater density of features. In particular, the use of a polymer spacer material allows for the formation of contacts within flash memory cells having decreased dimensions so that higher density flash memory cells may be created without causing shorts between contacts or shorts due to misalignment of the contacts. Additionally, the use of the polymer spacer material extends the use of photolithography technologies that are used to form the patterns into the photoresists.

    摘要翻译: 聚合物间隔物材料可以增加用作掩模的图案化光致抗蚀剂的尺寸,以蚀刻光致抗蚀剂下面的层,其又转化成蚀刻到下面的材料中的较小尺寸。 这允许形成具有较小特征,更小的总体尺寸和更大的特征密度的集成电路。 特别地,使用聚合物间隔物材料允许在具有减小的尺寸的闪速存储器单元内形成触点,使得可以创建更高密度的闪存单元,而不会由于触点的不对准而导致触点之间的短路或短路。 此外,使用聚合物间隔物材料延长了用于将光刻胶形成图案的光刻技术的使用。