发明申请
US20070228412A1 Low voltage triggering silicon controlled rectifier and circuit thereof
审中-公开
低电压触发可控硅整流器及其电路
- 专利标题: Low voltage triggering silicon controlled rectifier and circuit thereof
- 专利标题(中): 低电压触发可控硅整流器及其电路
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申请号: US11443963申请日: 2006-05-30
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公开(公告)号: US20070228412A1公开(公告)日: 2007-10-04
- 发明人: Sheng Yang , Cheng Fang
- 申请人: Sheng Yang , Cheng Fang
- 申请人地址: TW Hsinchu
- 专利权人: ADVANCED ANALOG TECHNOLOGY, INC.
- 当前专利权人: ADVANCED ANALOG TECHNOLOGY, INC.
- 当前专利权人地址: TW Hsinchu
- 优先权: TW095110868 20060329
- 主分类号: H01L29/74
- IPC分类号: H01L29/74
摘要:
A low voltage triggering silicon controlled rectifier (LVTSCR) is disclosed. The LVTSCR utilizes an added resistor disposed in a second doped region between the anode of the LVTSCR and the emitter of the parasitical bipolar PNP transistor to increase the holding voltage thereof when the LVTSCR is triggered. The LVTSCR includes a semiconductor substrate with a first conductive type and a gate. The semiconductor substrate includes a first doped region with a second conductive type, a second doped region with the first conductive type, a third doped region with the second conductive type, a fourth doped region with the second conductive type and a fifth doped region with the first conductive type. The gate is applied with a lower triggering voltage to trigger the LVTSCR.
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