发明申请
- 专利标题： Gallium Nitride Substrate, and Gallium-Nitride-Substrate Testing and Manufacturing Methods
- 专利标题（中）： 氮化镓衬底和氮化镓衬底测试和制造方法
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申请号： US11686364申请日： 2007-03-15
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公开(公告)号： US20070228521A1公开(公告)日： 2007-10-04
- 发明人: Akihiro Hachigo
- 申请人： Akihiro Hachigo
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 优先权： JPJP-2006-071140 20060315
- 主分类号： H01L29/30
- IPC分类号： H01L29/30
摘要：
Fracture-resistant gallium nitride substrate, and methods of testing for and manufacturing such substrates are made available. A gallium nitride substrate (10) is provided with a front side (12) polished to a mirrorlike finish, a back side (14) on the substrate side that is the opposite of the front side (12). A damaged layer (16) whose thickness d is 30 μm or less is formed on the back side (14). Given that the strength of the front side (12) is I1 and the strength of the back side (14) is I2, then the ratio I2/I1 is 0.46 or more.
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