发明申请
- 专利标题： Capacitor Film Forming Material
- 专利标题（中）： 电容成膜材料
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申请号： US11570092申请日： 2005-06-10
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公开(公告)号： US20070231251A1公开(公告)日： 2007-10-04
- 发明人: Atsushi Itsuki , Akio Yanagisawa , Nobuyuki Soyama
- 申请人： Atsushi Itsuki , Akio Yanagisawa , Nobuyuki Soyama
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Materials Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-173596 20040611
- 国际申请： PCT/JP05/10664 WO 20050610
- 主分类号： H01L21/316
- IPC分类号： H01L21/316
摘要：
Provided is a novel capacitor film forming material having a high growth rate and excellent step coverage, and obtained is a hafnium-containing film having excellent characteristics as a capacitor film with a high dielectric constant and a low reactivity with Si. A capacitor film forming material comprising a hafnium oxide film provided in a semiconductor memory device, is a capacitor film forming material in which the forming material comprises the organic hafnium compound of Hf(R1R2N)4 or Hf(OR3)4-n(R4)n and the content of Nb as an inevitable compound is 1 ppm or less.
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