公开(公告)号：US10468531B2

公开(公告)日：2019-11-05

申请号：US15293434

申请日：2016-10-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kunio Kimura ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC分类号： H01L29/786 ,  H01L21/316 ,  H01L21/30 ,  H01L29/49 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L27/146 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/32

摘要： One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.

公开(公告)号：US09972583B2

公开(公告)日：2018-05-15

申请号：US13959601

申请日：2013-08-05

申请人： Applied Microstructures, Inc.

发明人： Boris Kobrin ,  Nikunj Dangaria ,  Romuald Nowak ,  Michael T. Grimes

IPC分类号： H01L23/00 ,  H01L21/02 ,  B81C1/00 ,  H01L23/29 ,  B81B3/00 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L23/564 ,  B81B3/0075 ,  B81B2207/115 ,  B81C1/00206 ,  B81C1/0038 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon the first layer, wherein the second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon the second layer, wherein the third layer is a functional organic-comprising layer, wherein the functional organic-comprising layer is a SAM.

公开(公告)号：US09966251B2

公开(公告)日：2018-05-08

申请号：US14681065

申请日：2015-04-07

申请人： Hitachi Kokusai Electric Inc.

发明人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/54 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321

CPC分类号： H01L21/0223 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/32051 ,  H01L21/321

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

公开(公告)号：US09905414B2

公开(公告)日：2018-02-27

申请号：US15161903

申请日：2016-05-23

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon ,  Jill S. Becker ,  Dennis Hausmann ,  Seigi Suh

IPC分类号： C23C16/00 ,  C23C16/06 ,  H01L21/02 ,  C07F9/09 ,  C07F9/11 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/12 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C23C16/30 ,  H01L49/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51 ,  H01L21/316

CPC分类号： H01L21/02148 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02159 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

公开(公告)号：US09882039B2

公开(公告)日：2018-01-30

申请号：US13933668

申请日：2013-07-02

申请人： M. Asif Khan ,  Vinod Adivarahan

发明人： M. Asif Khan ,  Vinod Adivarahan

IPC分类号： H01L31/107 ,  H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/7783 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/30621 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/3185 ,  H01L29/2003 ,  H01L29/66462

摘要： Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).

公开(公告)号：US09790378B2

公开(公告)日：2017-10-17

申请号：US13996485

申请日：2011-12-16

申请人： Roy Gerald Gordon

发明人： Roy Gerald Gordon

IPC分类号： H01L21/316 ,  C09D7/12 ,  C23C16/18 ,  C23C16/34 ,  C23C16/448

CPC分类号： C09D7/1233 ,  C09D7/63 ,  C23C16/18 ,  C23C16/34 ,  C23C16/448

摘要： This disclosure relates to terpene solutions of metal precursors used for chemical vapor deposition, atomic layer deposition, spray pyrolysis or misted deposition. The terpenes do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. In spray pyrolysis or misted deposition, small droplets provide uniform coating. Terpenes have high flash points and low flammability, reducing the risk of fires. Terpenes have low toxicity and are biodegradable. They are available in large amounts from renewable, natural plant sources, and are low in cost.

公开(公告)号：US20170250204A1

公开(公告)日：2017-08-31

申请号：US15594813

申请日：2017-05-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Masahiro WATANABE ,  Hajime TOKUNAGA

IPC分类号： H01L27/12 ,  H01L21/316 ,  H01L29/24 ,  G02F1/1368 ,  H01L27/105 ,  H01L29/786 ,  H01L51/50

CPC分类号： H01L27/1248 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/50

摘要： Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

公开(公告)号：US09502218B2

公开(公告)日：2016-11-22

申请号：US14603638

申请日：2015-01-23

申请人： Applied Materials, Inc.

发明人： Xinglong Chen ,  Saurabh Garg ,  Jang-Gyoo Yang

IPC分类号： H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  H01L21/66 ,  C23C16/452 ,  C23C16/517 ,  H01L43/12 ,  H01L27/115 ,  H01L21/316 ,  H01L49/02

CPC分类号： H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

摘要： Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

摘要翻译： 本公开的实施例一般涉及一种混合等离子体处理系统，其包括具有用于衬底处理的电容耦合等离子体（CCP）单元的远程等离子体源（RPS）单元。 在一个实施例中，混合等离子体处理系统包括CCP单元，其包括具有一个或多个通孔的盖子和离子抑制元件，其中盖子和离子抑制元件限定等离子体激发区域，RPS单元耦合到 CCP单元和设置在离子抑制元件和基板支撑件之间的气体分配板，其中气体分配板和基板支撑件限定基板处理区域。 在过程需要更高功率的情况下，CCP和RPS单元都可用于产生等离子体激发的物质，以使一些功率负载从CCP单元转移到RPS单元，这允许CCP单元以较低的功率工作。

公开(公告)号：US09461247B2

公开(公告)日：2016-10-04

申请号：US14612083

申请日：2015-02-02

申请人： Cypress Semiconductor Corporation

发明人： Matthew Buynoski ,  Seungmoo Choi ,  Chakravarthy Gopalan ,  Dongxiang Liao ,  Christie Marrian

IPC分类号： H01L21/8242 ,  H01L45/00 ,  H01L21/316

CPC分类号： H01L45/165 ,  H01L21/31683 ,  H01L45/04 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1633

摘要： In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is then formed on the layer.

公开(公告)号：US09412605B2

公开(公告)日：2016-08-09

申请号：US14454606

申请日：2014-08-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L21/311 ,  H01L21/316

CPC分类号： H01L21/30621 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02301 ,  H01L21/02658 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/324 ,  H01L21/823885 ,  H01L21/8258 ,  H01L29/0676 ,  H01L29/42372 ,  H01L29/7827

摘要： Embodiments of the present disclosure relate generally to a method of passivating and/or removing oxides on a semiconductor surface by using ammonium sulfide, the ammonium sulfide is formed by reacting ammonia and hydrogen sulfide in a semiconductor processing chamber, therefore the ammonium sulfide can be used to clean and remove oxides on a semiconductor surface without the concern of ESH and storage, the ammonium sulfide can also be used to passivate a semiconductor surface by forming a layer of sulfur, and thus preventing the reformation of native oxides, the layer of sulfur can be optionally removed to reduce the thickness of the semiconductor material.

摘要翻译： 本公开的实施方案一般涉及通过使用硫化铵钝化和/或去除半导体表面上的氧化物的方法，硫化铵通过在半导体处理室中使氨和硫化氢反应形成，因此可以使用硫化铵 在不考虑ESH和储存的情况下清洁和去除半导体表面上的氧化物，硫化铵也可以通过形成一层硫而用于钝化半导体表面，从而防止天然氧化物的重整，硫的层可以 可选地去除以减小半导体材料的厚度。