发明申请
US20070231984A1 Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors
有权
在三维晶体管的外延生长的源极和漏极区上的均匀的硅化物金属
- 专利标题: Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors
- 专利标题(中): 在三维晶体管的外延生长的源极和漏极区上的均匀的硅化物金属
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申请号: US11395940申请日: 2006-03-31
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公开(公告)号: US20070231984A1公开(公告)日: 2007-10-04
- 发明人: Matthew Metz , Suman Datta , Mark Doczy , Jack Kavalieros , Justin Brask , Robert Chau
- 申请人: Matthew Metz , Suman Datta , Mark Doczy , Jack Kavalieros , Justin Brask , Robert Chau
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
A method for fabricating a three-dimensional transistor is described. Atomic Layer Deposition of nickel, in one embodiment, is used to form a uniform silicide on all epitaxially grown source and drain regions, including those facing downwardly.