发明申请
- 专利标题： Method of manufacturing a semiconductor element
- 专利标题（中）： 制造半导体元件的方法
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申请号： US11730665申请日： 2007-04-03
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公开(公告)号： US20070232064A1公开(公告)日： 2007-10-04
- 发明人: Jun-hwan Oh , Hong-seong Son , Sang-min Lee , Ju-hyuck Chung
- 申请人： Jun-hwan Oh , Hong-seong Son , Sang-min Lee , Ju-hyuck Chung
- 优先权： KR10-2006-0030291 20060403
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of manufacturing a semiconductor element, includes forming a lower metal wiring layer and an interlayer insulating film on a substrate, forming an opening through the interlayer insulating film, such that the opening is in communication with an upper surface of the lower metal wiring layer, cleaning the opening, forming a metal wiring line protecting film in the opening, such that the metal wiring line protecting film covers the lower metal wiring layer, washing the opening to remove the metal wiring line protecting film, such that a top surface of the lower metal wiring layer is exposed, and drying the substrate.
公开/授权文献
- US07645695B2 Method of manufacturing a semiconductor element 公开/授权日：2010-01-12
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