发明申请
US20070232068A1 Slurry for touch-up CMP and method of manufacturing semiconductor device
审中-公开
用于贴合CMP的浆料和半导体器件的制造方法
- 专利标题： Slurry for touch-up CMP and method of manufacturing semiconductor device
- 专利标题（中）： 用于贴合CMP的浆料和半导体器件的制造方法
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申请号： US11717045申请日： 2007-03-13
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公开(公告)号： US20070232068A1公开(公告)日： 2007-10-04
- 发明人: Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Takatoshi Ono , Susumu Yamamoto , Hiroyuki Yano
- 申请人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Takatoshi Ono , Susumu Yamamoto , Hiroyuki Yano
- 优先权： JP2006-092232 20060329
- 主分类号： B24D3/02
- IPC分类号： B24D3/02 ; H01L21/461 ; H01L21/302
摘要：
A slurry for touch-up CMP is provided, which includes water, colloidal silica having an average primary particle diameter of 5 to 60 nm, unsintered cerium oxide having an average primary particle diameter of 5 to 60 nm, a multivalent organic acid containing no nitrogen atoms, and a nitrogen-containing heterocyclic compound. The slurry has a pH of 8 to 12.