发明申请
- 专利标题： METHOD FOR REPLACING A NITROUS OXIDE BASED OXIDATION PROCESS WITH A NITRIC OXIDE BASED OXIDATION PROCESS FOR SUBSTRATE PROCESSING
- 专利标题（中）： 基于氧化氮的氧化过程替代氧化镍基氧化工艺的方法，用于衬底加工
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申请号： US11278054申请日： 2006-03-30
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公开(公告)号： US20070238313A1公开(公告)日： 2007-10-11
- 发明人: Anthony Dip
- 申请人： Anthony Dip
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N2O that thermally decomposes in a process chamber of the batch processing system to N2, O2, and NO byproducts, and generating a replacement NO-based oxidation process for the substrates including a second process gas containing N2, O2, and NO with molar concentrations that mimic that of the N2, O2, and NO byproducts in the N2O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O2, and an inert gas.