发明申请
- 专利标题： Phase change memory cell with limited switchable volume
- 专利标题（中）： 相变容量有限的相变存储单元
-
申请号： US11410466申请日： 2006-04-25
-
公开(公告)号： US20070246748A1公开(公告)日： 2007-10-25
- 发明人: Matthew Breitwisch , Chung Lam , Jan Philipp , Stephen Rossnagel , Alejandro Schrott
- 申请人： Matthew Breitwisch , Chung Lam , Jan Philipp , Stephen Rossnagel , Alejandro Schrott
- 主分类号： H01L29/768
- IPC分类号： H01L29/768
摘要：
A memory cell comprises a dielectric layer and a phase change material. The dielectric layer defines a trench having both a wide portion and a narrow portion. The narrow portion is substantially narrower than the wide portion. The phase change material, in turn, at least partially fills the wide and narrow portions of the trench. What is more, the phase change material within the narrow portion of the trench defines a void. Data can be stored in the memory cell by heating the phase change material by applying a pulse of switching current to the memory cell. Advantageously, embodiments of the invention provide high switching current density and heating efficiency so that the magnitude of the switching current pulse can be reduced.
公开/授权文献
- US07514705B2 Phase change memory cell with limited switchable volume 公开/授权日：2009-04-07
信息查询
IPC分类:
