A method of manufacturing a Field Emission Display (FED) having a double gate structure using a half tone photomask includes sequentially forming a cathode material layer, a resistance material layer, and a photoresist on a substrate, arranging a half tone photomask on the photoresist, the half tone photomask having a first pattern that shields light and a second pattern that partially transmits light formed in respective predetermined shapes, exposing the photoresist to light to develop it, forming a resistance layer and a cathode electrode by sequentially etching the resistance material layer and the cathode material layer exposed through the developed photoresist, etching the developed photoresist until the resistance layer located on an upper part of a pad region of the cathode electrode is exposed, exposing the pad region of the cathode electrode by etching the resistance layer exposed through the etched photoresist, and removing the photoresist.