发明申请
- 专利标题: Processing Apparatus Using Source Gas and Reactive Gas
- 专利标题(中): 使用源气和反应气的加工设备
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申请号: US10555813申请日: 2004-05-13
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公开(公告)号: US20070251452A1公开(公告)日: 2007-11-01
- 发明人: Masayuki Tanaka , Kouzo Kai , Seischi Murakami , Tetsuya Miyashita
- 申请人: Masayuki Tanaka , Kouzo Kai , Seischi Murakami , Tetsuya Miyashita
- 优先权: JP2003-134991 20030513; JP2003-310713 20030902
- 国际申请: PCT/JP04/06445 WO 20040513
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; H01L21/285
摘要:
The present invention relates to a processing apparatus for performing a film-deposition process or the like for an object to be processed (such as a semiconductor wafer) by means of a source gas and a reactive gas. The processing apparatus includes: a processing vessel (22) that contains therein an object to be processed (W); a source gas supply system (50) that selectively supplies a source gas into the processing vessel; a reactive gas supply system (52) that selectively supplies a reactive gas into the processing vessel; and a vacuum evacuating system (36) having vacuum pumps (44, 46), the system exhausting an atmosphere in the processing vessel to form a vacuum. The processing apparatus further includes: a source gas by-pass line (62) that selectively feeds the source gas into the vacuum evacuating system with the source gas bypassing the processing vessel; and a reactive gas by-pass line that selectively feeds the reactive gas to the vacuum evacuating system with the reactive gas bypassing the processing vessel. The source gas by-pass line (62) has a source gas escape prevention valve (X1) that prevents an escape of the source gas from the by-pass line into the vacuum evacuating system when the valve is in the closed condition. The reactive gas by-pass line (66) has a reactive gas escape prevention valve (Y1) that prevents an escape of the reactive gas from the by-pass line into the vacuum evacuating system when the valve is in the closed condition.