公开(公告)号：US20070251452A1

公开(公告)日：2007-11-01

申请号：US10555813

申请日：2004-05-13

申请人： Masayuki Tanaka ,  Kouzo Kai ,  Seischi Murakami ,  Tetsuya Miyashita

发明人： Masayuki Tanaka ,  Kouzo Kai ,  Seischi Murakami ,  Tetsuya Miyashita

IPC分类号： C23C16/455 ,  H01L21/285

CPC分类号： C23C16/45561 ,  C23C16/4412 ,  H01L21/28556 ,  H01L21/28562

摘要： The present invention relates to a processing apparatus for performing a film-deposition process or the like for an object to be processed (such as a semiconductor wafer) by means of a source gas and a reactive gas. The processing apparatus includes: a processing vessel (22) that contains therein an object to be processed (W); a source gas supply system (50) that selectively supplies a source gas into the processing vessel; a reactive gas supply system (52) that selectively supplies a reactive gas into the processing vessel; and a vacuum evacuating system (36) having vacuum pumps (44, 46), the system exhausting an atmosphere in the processing vessel to form a vacuum. The processing apparatus further includes: a source gas by-pass line (62) that selectively feeds the source gas into the vacuum evacuating system with the source gas bypassing the processing vessel; and a reactive gas by-pass line that selectively feeds the reactive gas to the vacuum evacuating system with the reactive gas bypassing the processing vessel. The source gas by-pass line (62) has a source gas escape prevention valve (X1) that prevents an escape of the source gas from the by-pass line into the vacuum evacuating system when the valve is in the closed condition. The reactive gas by-pass line (66) has a reactive gas escape prevention valve (Y1) that prevents an escape of the reactive gas from the by-pass line into the vacuum evacuating system when the valve is in the closed condition.

摘要翻译： 本发明涉及一种用于通过源气体和反应性气体对被处理物体（例如半导体晶片）进行成膜处理等的处理装置。 处理装置包括：处理容器（22），其中容纳有待处理物体（W）; 源气体供应系统（50），其选择性地将源气体供应到处理容器中; 反应气体供应系统（52），其选择性地将反应性气体供应到处理容器中; 和具有真空泵（44,46）的真空排气系统（36），所述系统排出处理容器中的气氛以形成真空。 所述处理装置还包括：源气体旁通管线（62），其选择性地将所述源气体进料到所述真空抽气系统中，所述源气体绕过所述处理容器; 以及反应气体旁通管线，其选择性地将反应气体输送到真空抽气系统，反应气体绕过处理容器。 源气体旁通管线（62）具有源气体排放防止阀（X 1），其防止当阀处于关闭状态时源气体从旁路管线逸出到真空排气系统中。 反应性气体旁通管线（66）具有防止气体逸出防止阀（Y 1），当阀处于关闭状态时，防止反应气体从旁路管线逸出到真空排气系统中。