发明申请
US20070252088A1 MONITORING IONIZING RADIATION IN SILICON-ON INSULATOR INTEGRATED CIRCUITS 有权
监测硅绝缘子集成电路中的离子化辐射

MONITORING IONIZING RADIATION IN SILICON-ON INSULATOR INTEGRATED CIRCUITS
摘要:
A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.
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