发明申请
- 专利标题: MONITORING IONIZING RADIATION IN SILICON-ON INSULATOR INTEGRATED CIRCUITS
- 专利标题(中): 监测硅绝缘子集成电路中的离子化辐射
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申请号: US11380736申请日: 2006-04-28
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公开(公告)号: US20070252088A1公开(公告)日: 2007-11-01
- 发明人: Wagdi Abadeer , Ethan Cannon , Dennis Cox , William Tonti
- 申请人: Wagdi Abadeer , Ethan Cannon , Dennis Cox , William Tonti
- 主分类号: G01T1/02
- IPC分类号: G01T1/02
摘要:
A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.
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