发明申请
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11790791申请日: 2007-04-27
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公开(公告)号: US20070252173A1公开(公告)日: 2007-11-01
- 发明人: Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
- 申请人: Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
- 专利权人: NISSAN MOTOR CO., LTD.
- 当前专利权人: NISSAN MOTOR CO., LTD.
- 优先权: JP2006-125117 20060428
- 主分类号: H01L29/739
- IPC分类号: H01L29/739
摘要:
A semiconductor device is provided with: a semiconductor substrate of a predetermined electroconduction type; a hetero semiconductor region contacted with a first main surface of the semiconductor substrate and comprising a semiconductor material having a bandgap different from that of the semiconductor substrate; a gate electrode formed through a gate insulator layer at a position adjacent to a junction region between the hetero semiconductor region and the semiconductor substrate; a source electrode connected to the hetero semiconductor region; and a drain electrode connected to the semiconductor substrate; wherein the hetero semiconductor region includes a contact portion contacted with the source electrode, at least a partial region of the contact portion is of the same electroconduction type as the electroconduction type of the semiconductor substrate, and the partial region has an impurity concentration higher than an impurity concentration of at least that partial region of a gate-electrode facing portion in the hetero semiconductor region which is positioned to face toward the gate electrode through the gate insulator layer.
公开/授权文献
- US07880199B2 Semiconductor device and manufacturing method thereof 公开/授权日:2011-02-01