发明申请
- 专利标题: Process for forming a silicon-based single-crystal portion
- 专利标题(中): 用于形成硅基单晶部分的方法
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申请号: US11788391申请日: 2007-04-18
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公开(公告)号: US20070254451A1公开(公告)日: 2007-11-01
- 发明人: Didier Dutartre , Laurent Rubaldo , Alexandre Talbot
- 申请人: Didier Dutartre , Laurent Rubaldo , Alexandre Talbot
- 申请人地址: FR Montrouge
- 专利权人: STMicroelectronics S.A.
- 当前专利权人: STMicroelectronics S.A.
- 当前专利权人地址: FR Montrouge
- 优先权: FR0603453 20060419
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/302
摘要:
Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of the non-chlorinated hydride type, and under suitable conditions so that the layer is a single-crystal layer in the zones of the substrate where a single-crystal material is initially exposed and amorphous outside these zones. The amorphous portions of the layer are then selectively etched so that only the single-crystal portions of the layer remain on the substrate.
公开/授权文献
- US08158495B2 Process for forming a silicon-based single-crystal portion 公开/授权日:2012-04-17