发明申请
US20070255891A1 High-Speed Controller for Phase-Change Memory Peripheral Device
失效
用于相变存储器外围设备的高速控制器
- 专利标题: High-Speed Controller for Phase-Change Memory Peripheral Device
- 专利标题(中): 用于相变存储器外围设备的高速控制器
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申请号: US11770642申请日: 2007-06-28
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公开(公告)号: US20070255891A1公开(公告)日: 2007-11-01
- 发明人: David Chow , Charles Lee , Frank Yu
- 申请人: David Chow , Charles Lee , Frank Yu
- 申请人地址: US CA San Jose 95132
- 专利权人: SUPER TALENT ELECTRONICS INC.
- 当前专利权人: SUPER TALENT ELECTRONICS INC.
- 当前专利权人地址: US CA San Jose 95132
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
Peripheral devices store data in non-volatile phase-change memory (PCM). PCM cells have alloy resistors with high-resistance amorphous states and low-resistance crystalline states. The peripheral device can be a Multi-Media Card/Secure Digital (MMC/SD) card. A PCM controller accesses PCM memory devices. Various routines that execute on a CPU in the PCM controller are activated in response to commands in the host-bus transactions. The PCM system increases the throughput of one or more phase-change memory devices by performing one or more of a read-ahead memory operation, a write-ahead memory write operation, a larger page memory write operation, a wider data bus memory write operation, a multi-channel concurrent multi-bank interleaving memory read or write operation, a write-cache memory write operation, and any combination thereof.
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