发明申请
- 专利标题: Dielectric trenches, nickel/tantalum oxide structures,and chemical mechanical polishing techniques
- 专利标题(中): 介质沟槽,镍/氧化钽结构和化学机械抛光技术
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申请号: US11418801申请日: 2006-05-05
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公开(公告)号: US20070257367A1公开(公告)日: 2007-11-08
- 发明人: Sergey Savastiouk , Valentin Kosenko , James Roman
- 申请人: Sergey Savastiouk , Valentin Kosenko , James Roman
- 专利权人: Tru-Si Technologies, Inc.
- 当前专利权人: Tru-Si Technologies, Inc.
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L23/48 ; H01L29/40 ; H01L21/4763
摘要:
A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the electrode but insulated from the electrode. Capacitor dielectric (320) can be formed by anodizing tantalum while a nickel layer (314) protects an underlying copper (310) from the anodizing solution. This protection allows the tantalum layer to be made thin to obtain large capacitance. Chemical mechanical polishing of a layer (610) is made faster, and hence possibly less expensive, by first patterning the layer photolithographically to form, and/or increase in height, upward protrusions of this layer.