发明申请
US20070259518A1 Method and apparatus for diverting void diffusion in integrated circuit conductors
有权
用于在集成电路导体中转移空穴扩散的方法和装置
- 专利标题： Method and apparatus for diverting void diffusion in integrated circuit conductors
- 专利标题（中）： 用于在集成电路导体中转移空穴扩散的方法和装置
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申请号： US11323398申请日： 2005-12-29
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公开(公告)号： US20070259518A1公开(公告)日： 2007-11-08
- 发明人: Derryl Allman , Hemanshu Bhatt , Charles May , Peter Burke , Byung-Sung Kwak , Sey-Shing Sun , David Price , David Pritchard
- 申请人： Derryl Allman , Hemanshu Bhatt , Charles May , Peter Burke , Byung-Sung Kwak , Sey-Shing Sun , David Price , David Pritchard
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/4763 ; H01L21/768
摘要：
A method of diverting void diffusion in an integrated circuit includes steps of forming an electrical conductor having a boundary in a first electrically conductive layer of an integrated circuit, forming a via inside the boundary of the electrical conductor in a dielectric layer between the first electrically conductive layer and a second electrically conductive layer of the integrated circuit, and forming a slot between the via and the boundary of the electrical conductor for diverting void diffusion in the electrical conductor away from the via.
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