发明申请
- 专利标题： Producing Method of Semiconductor Device and Substrate Processing Apparatus
- 专利标题（中）： 半导体器件和衬底加工设备的生产方法
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申请号： US10572396申请日： 2004-09-17
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公开(公告)号： US20070259532A1公开(公告)日： 2007-11-08
- 发明人: Kenichi Suzaki , Jie Wang
- 申请人： Kenichi Suzaki , Jie Wang
- 申请人地址： JP Tokyo 164-8511
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo 164-8511
- 优先权： JP2003-327358 20030919
- 国际申请： PCT/JP04/13678 WO 20040917
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/44 ; H01L21/31
摘要：
Disclosed is a producing method of a semiconductor device comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed, and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.
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