公开(公告)号：US07915165B2

公开(公告)日：2011-03-29

申请号：US12662384

申请日：2010-04-14

申请人： Takashi Ozaki ,  Kenichi Suzaki

发明人： Takashi Ozaki ,  Kenichi Suzaki

IPC分类号： H01L21/44

CPC分类号： H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

摘要： A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

摘要翻译： 用于支撑晶片（1）的支撑部分（28）凸形地形成在船21的支撑槽（25）的接收部分（26）的中心。在船（21）的船装载时， ，其中分别由所述支撑部分（28）接收的晶片（1）从待机室（33）到处理室（14）对准，所述备用室（33）和处理室（14）中的压力为 设定为200帕斯卡以上，3000帕斯卡以下。 通过使用支撑部分从接收部分向上支撑晶片，即使在晶片的支撑表面和支撑部分之间的减小的压力下，晶片上的膜的剥离发生在晶片上， 剥离被接收部分捕获，因此防止颗粒直接在接收部分的正下方粘附到晶片的IC制造表面。

公开(公告)号：US20070259532A1

公开(公告)日：2007-11-08

申请号：US10572396

申请日：2004-09-17

申请人： Kenichi Suzaki ,  Jie Wang

发明人： Kenichi Suzaki ,  Jie Wang

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/31

CPC分类号： C23C16/463 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/4411 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S438/905

摘要： Disclosed is a producing method of a semiconductor device comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed, and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

摘要翻译： 公开了一种半导体器件的制造方法，包括：将基板装载到反应炉中; 在反应炉中在基板上形成膜; 在形成膜之后从反应炉中卸载基板，并且在基板卸载之后在基板不存在于反应炉中的状态下强制冷却反应炉内部。

公开(公告)号：US20100201055A1

公开(公告)日：2010-08-12

申请号：US12662384

申请日：2010-04-14

申请人： Takashi Ozaki ,  Kenichi Suzaki

发明人： Takashi Ozaki ,  Kenichi Suzaki

IPC分类号： B25B11/00

CPC分类号： H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

摘要： A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

公开(公告)号：US20060205213A1

公开(公告)日：2006-09-14

申请号：US10517765

申请日：2003-06-26

申请人： Takashi Ozaki ,  Kenichi Suzaki

发明人： Takashi Ozaki ,  Kenichi Suzaki

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

摘要： A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

摘要翻译： 用于支撑晶片（1）的支撑部分（28）凸形地形成在船21的支撑槽（25）的接收部分（26）的中心。在船（21）的船装载时， ，其中分别由所述支撑部分（28）接收的晶片（1）从待机室（33）到处理室（14）对准，所述备用室（33）和处理室（14）中的压力为 设定为200帕斯卡以上，3000帕斯卡以下。 通过使用支撑部分从接收部分向上支撑晶片，即使在晶片的支撑表面和支撑部分之间的减小的压力下，晶片上的膜的剥离发生在晶片上， 剥离被接收部分捕获，因此防止颗粒直接在接收部分的正下方粘附到晶片的IC制造表面。

公开(公告)号：US08211798B2

公开(公告)日：2012-07-03

申请号：US12929444

申请日：2011-01-25

申请人： Takashi Ozaki ,  Kenichi Suzaki

发明人： Takashi Ozaki ,  Kenichi Suzaki

IPC分类号： H01L21/44

CPC分类号： H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

摘要： A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

摘要翻译： 用于支撑晶片（1）的支撑部分（28）凸形地形成在船21的支撑槽（25）的接收部分（26）的中心。在船（21）的船装载时， ，其中分别由所述支撑部分（28）接收的晶片（1）从待机室（33）到处理室（14）对准，所述备用室（33）和处理室（14）中的压力为 设定为200帕斯卡以上，3000帕斯卡以下。 通过使用支撑部分从接收部分向上支撑晶片，即使在晶片的支撑表面和支撑部分之间的减小的压力下，晶片上的膜的剥离发生在晶片上， 剥离被接收部分捕获，因此防止颗粒直接在接收部分的正下方粘附到晶片的IC制造表面。

公开(公告)号：US20110239936A1

公开(公告)日：2011-10-06

申请号：US13098993

申请日：2011-05-02

申请人： Kenichi SUZAKI ,  Jie WANG

发明人： Kenichi SUZAKI ,  Jie WANG

IPC分类号： C23C16/52 ,  H01L21/36

CPC分类号： C23C16/463 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/4411 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S438/905

摘要： A process for producing a semiconductor device, comprising the steps of conducting film formation on substrate (10) in reactor (1); and unloading the substrate (10) after film formation from the reactor (1) and thereafter effecting forced air cooling of the interior of the reactor (1) while the substrate (10) is absent in the reactor (1). The stress of deposited film adhering in the reactor (1) is increased over that exhibited at air cooling without blower so as to positively generate thermal stress with the result that the deposited film would undergo forced cracking over that exhibited at air cooling without blower. Microparticles scattered by the cracking are efficiently discharged from the reactor forcibly through purging in the reactor in the state of atmospheric pressure.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在反应器（1）中的衬底（10）上形成膜; 以及在成膜后从反应器（1）中卸载基板（10），然后在反应器（1）中不存在基板（10）的同时对反应器（1）的内部进行强制空气冷却。 附着在反应器（1）中的沉积膜的应力比没有鼓风机的空气冷却显示出的沉积膜的应力增加，从而积极地产生热应力，结果是沉积膜将在没有鼓风机的空气冷却下显现出强制开裂。 通过在大气压力的状态下通过在反应器中吹扫强制地将从裂化物散落的微粒有效排出反应堆。

公开(公告)号：US07955991B2

公开(公告)日：2011-06-07

申请号：US10572396

申请日：2004-09-17

申请人： Kenichi Suzaki ,  Jie Wang

发明人： Kenichi Suzaki ,  Jie Wang

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/463 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/4411 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S438/905

摘要： Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

摘要翻译： 公开了一种半导体器件的制造方法，其特征在于，包括：将基板装载到反应炉内; 在反应炉中在基板上形成膜; 在形成膜之后从反应炉中卸载基板; 在基板卸载后，在反应炉内不存在基板的状态下强制地冷却反应炉的内部。

公开(公告)号：US07737034B2

公开(公告)日：2010-06-15

申请号：US10517765

申请日：2003-06-26

申请人： Takashi Ozaki ,  Kenichi Suzaki

发明人： Takashi Ozaki ,  Kenichi Suzaki

IPC分类号： H01L21/44

CPC分类号： H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

摘要： A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

摘要翻译： 用于支撑晶片（1）的支撑部分（28）凸形地形成在船21的支撑槽（25）的接收部分（26）的中心。在船（21）的船装载时， ，其中分别由所述支撑部分（28）接收的晶片（1）从待机室（33）到处理室（14）对准，所述备用室（33）和处理室（14）中的压力为 设定为200帕斯卡以上，3000帕斯卡以下。 通过使用支撑部分从接收部分向上支撑晶片，即使在晶片的支撑表面和支撑部分之间的减小的压力下，晶片上的膜的剥离发生在晶片上， 剥离被接收部分捕获，因此防止颗粒直接在接收部分的正下方粘附到晶片的IC制造表面。

公开(公告)号：US07731797B2

公开(公告)日：2010-06-08

申请号：US11665217

申请日：2005-10-26

申请人： Seiyo Nakashima ,  Tomoshi Taniyama ,  Kenichi Suzaki ,  Yoshikazu Takashima

发明人： Seiyo Nakashima ,  Tomoshi Taniyama ,  Kenichi Suzaki ,  Yoshikazu Takashima

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67017 ,  C23C16/4408 ,  H01L21/67757

摘要： A gas flow in a load-lock type preliminary chamber is improved. A load-lock type substrate treating apparatus contains a processing chamber (34) for storing and processing a substrate (1); a preliminary chamber (23) continuously arranged to the processing chamber (31); a substrate holding jig mechanism (40) for carrying in and carrying out a substrate holding jig (50) holding multiple substrates (1), to and from the processing chamber (31); an inert gas supply port (61) for supplying inert gas to the preliminary chamber (23); a first exhaust port (71) provided above the inert gas supply port (61) in the preliminary chamber (23) to exhaust the inert gas: a second exhaust port (81) to draw a vacuum in the preliminary chamber (23); and a controller (100) for performing control so that the inert gas supplied from the inert gas supply port (61) is exhausted only from the first exhaust port (71), while maintaining the preliminary chamber (23) drawn a vacuum from the second exhaust port (81) at a specified pressure after raising the pressure.

摘要翻译： 提高了装载型预备室中的气流。 负载锁定型基板处理装置包括用于存储和处理基板（1）的处理室（34）。 连续地布置到处理室（31）的预备室（23）; 用于承载并执行将多个基板（1）保持在所述处理室（31）上的基板保持夹具（50）的基板保持夹具机构（40）。 用于向预备室（23）供给惰性气体的惰性气体供给口（61）; 第一排气口（71），其设置在所述预备室（23）中的所述惰性气体供给口（61）的上方排出所述惰性气体;第二排气口（81），在所述预备室（23）中抽真空; 以及控制器（100），用于进行控制，使得从惰性气体供给口（61）供给的惰性气体仅从第一排气口（71）排出，同时保持预备室（23）从第二排气口 排气口（81）在提高压力之后处于规定的压力。

公开(公告)号：US20090239386A1

公开(公告)日：2009-09-24

申请号：US12404915

申请日：2009-03-16

申请人： Kenichi SUZAKI ,  Jie Wang

发明人： Kenichi SUZAKI ,  Jie Wang

IPC分类号： H01L21/30 ,  C23C16/56

CPC分类号： C23C16/463 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/4411 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S438/905

摘要： Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

摘要翻译： 公开了一种半导体器件的制造方法，其特征在于，包括：将基板装载到反应炉内; 在反应炉中在基板上形成膜; 在形成膜之后从反应炉中卸载基板; 在基板卸载后，在反应炉内不存在基板的状态下强制地冷却反应炉的内部。