- 专利标题： Semiconductor memory device and manufacturing method thereof
-
申请号： US11878296申请日： 2007-07-23
-
公开(公告)号： US20070262374A1公开(公告)日： 2007-11-15
- 发明人: Masahiko Higashi , Manabu Nakamura , Kentaro Sera , Hiroyuki Nansei , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
- 申请人： Masahiko Higashi , Manabu Nakamura , Kentaro Sera , Hiroyuki Nansei , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
- 申请人地址： US CA SUNNYVALE
- 专利权人： SPANSION LLC
- 当前专利权人： SPANSION LLC
- 当前专利权人地址： US CA SUNNYVALE
- 优先权： JP2002-255528 20020830
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.
公开/授权文献
信息查询
IPC分类:
