公开(公告)号：US20120315564A1

公开(公告)日：2012-12-13

申请号：US13580639

申请日：2011-02-25

申请人： Tetsuro Fujimoto ,  Masahiko Higashi

发明人： Tetsuro Fujimoto ,  Masahiko Higashi

IPC分类号： H01M8/02 ,  B32B15/04 ,  H01M8/04 ,  H01M4/64 ,  H01M8/24

CPC分类号： H01M8/0217 ,  C22C18/04 ,  C22C19/05 ,  C22C19/058 ,  C22C38/18 ,  C23C14/08 ,  C23C28/345 ,  H01M8/0228 ,  H01M2008/1293

摘要： A composite body includes a substrate containing Cr; and a first composite oxide layer disposed on at least a part of a surface of the substrate, the first composite oxide layer having a spinel type crystal structure, a first largest content and a second largest content among constituent elements excluding oxygen of the first composite oxide layer being Zn and Al in random order. Accordingly, the composite body can suppress diffusion of Cr from the substrate containing Cr to the first composite oxide layer, and has improved long-term reliability. A collector member and a gas tank, each of which is formed of the composite body, can have improved long-term reliability. A fuel cell device having excellent long-term reliability can be obtained using the collector member and the gas tank.

摘要翻译： 复合体包括含有Cr的基材; 以及设置在所述基板的表面的至少一部分上的第一复合氧化物层，所述第一复合氧化物层具有尖晶石型晶体结构，除了所述第一复合氧化物的氧以外的构成元素中的第一大含量和第二大含量 层以Zn和Al的顺序排列。 因此，复合体能够抑制Cr从含有Cr的基板向第一复合氧化物层的扩散，并且具有提高的长期可靠性。 由复合体形成的集电体和气罐可以提高长期的可靠性。 可以使用集电体和气罐来获得具有优异的长期可靠性的燃料电池装置。

公开(公告)号：US08076206B2

公开(公告)日：2011-12-13

申请号：US12193266

申请日：2008-08-18

申请人： Masahiko Higashi

发明人： Masahiko Higashi

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L29/66833 ,  H01L29/792

摘要： A method for manufacturing a semiconductor device which includes steps of forming a dummy layer on a semiconductor substrate, forming a groove 12 in the semiconductor substrate while using the dummy layer as a mask, forming a tunnel insulating film and a trap layer to cover an inner surface of the groove and the dummy layer, eliminating the trap layer formed above the upper surface and at the sides of the dummy layer, and forming a top insulating film to cover a remaining trap layer and the exposed tunnel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成虚设层，在半导体衬底中形成凹槽12，同时使用虚设层作为掩模，形成隧道绝缘膜和陷阱层以覆盖内部 凹槽和虚设层的表面，消除了形成在虚设层的上表面和侧面的陷阱层，并且形成顶部绝缘膜以覆盖剩余的捕获层和暴露的隧道绝缘膜。

公开(公告)号：US07820547B2

公开(公告)日：2010-10-26

申请号：US12179400

申请日：2008-07-24

申请人： Naofumi Takahata ,  Masahiko Higashi ,  Yukihiro Utsuno

发明人： Naofumi Takahata ,  Masahiko Higashi ,  Yukihiro Utsuno

IPC分类号： H01L21/4763

CPC分类号： H01L29/792 ,  H01L27/11565 ,  H01L27/11568

摘要： A method for manufacturing a semiconductor device, the method including: forming a bit line in a semiconductor substrate; forming a plurality of word lines which intersect with the bit line at predetermined intervals on the semiconductor substrate; eliminating a portion of the plurality of word lines; forming an interlayer insulating film on the semiconductor substrate; and forming a metal plug which penetrates through the interlayer insulating film and is coupled to the bit line in a region where the portion of the plurality of word lines was eliminated.

摘要翻译： 一种制造半导体器件的方法，所述方法包括：在半导体衬底中形成位线; 在所述半导体衬底上形成与所述位线以预定间隔相交的多个字线; 消除多个字线的一部分; 在半导体衬底上形成层间绝缘膜; 以及形成穿过所述层间绝缘膜的金属插塞，并且在所述多个字线的所述部分被去除的区域中耦合到所述位线。

公开(公告)号：US20100109070A1

公开(公告)日：2010-05-06

申请号：US12266512

申请日：2008-11-06

申请人： Masahiko Higashi

发明人： Masahiko Higashi

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/42348 ,  H01L29/7923

摘要： A device and method employing a polyoxide-based charge trapping component. A charge trapping component is patterned by etching a layered stack that includes a tunneling layer positioned on a substrate, a charge trapping layer positioned on the tunneling layer, and an amorphous silicon layer positioned on the charge trapping layer. An oxidation process grows a gate oxide layer from the substrate and converts the amorphous silicon layer into a polyoxide layer.

摘要翻译： 使用基于聚氧化物的电荷捕获组分的装置和方法。 通过蚀刻包括位于衬底上的隧道层，位于隧道层上的电荷捕获层和位于电荷俘获层上的非晶硅层来蚀刻电荷俘获部件来图案化。 氧化工艺从衬底生长栅极氧化层，并将非晶硅层转化成多氧化物层。

公开(公告)号：US20090237990A1

公开(公告)日：2009-09-24

申请号：US12235321

申请日：2008-09-22

申请人： Hiroshi MURAI ,  Masahiko Higashi

发明人： Hiroshi MURAI ,  Masahiko Higashi

IPC分类号： G11C16/04 ,  H01L29/792 ,  H01L21/336 ,  G11C11/34

CPC分类号： H01L27/11568 ,  H01L27/11565

摘要： The present invention provides a semiconductor device and a method for manufacturing thereof. The semiconductor device includes bit lines disposed in a semiconductor substrate, a first ONO disposed between the bit lines on the semiconductor substrate, and a second ONO film disposed on each of the bit lines. The film thickness of a first silicon nitride film in the first ONO film is larger than the film thickness of a second silicon nitride film in the second ONO film.

摘要翻译： 本发明提供一种半导体器件及其制造方法。 半导体器件包括设置在半导体衬底中的位线，设置在半导体衬底上的位线之间的第一ONO和设置在每个位线上的第二ONO膜。 第一ONO膜中的第一氮化硅膜的膜厚度大于第二ONO膜中的第二氮化硅膜的膜厚度。

公开(公告)号：US07250391B2

公开(公告)日：2007-07-31

申请号：US10617128

申请日：2003-07-11

申请人： Itaru Kanno ,  Yasuhiro Asaoka ,  Masahiko Higashi ,  Yoshiharu Hidaka ,  Etsuro Kishio ,  Tetsuo Aoyama ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Toshihiko Nagai

发明人： Itaru Kanno ,  Yasuhiro Asaoka ,  Masahiko Higashi ,  Yoshiharu Hidaka ,  Etsuro Kishio ,  Tetsuo Aoyama ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Toshihiko Nagai

IPC分类号： C11D7/50

CPC分类号： H01L21/02063 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76838

摘要： The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.

摘要翻译： 用于除去抗蚀剂的清洁组合物包括氢氟酸盐和不含金属的基质（A组分），水溶性有机溶剂（B1组分），至少一种有机酸或无机酸（C组分），水（ D成分）和任选的铵盐（E1成分），pH4〜8。 因此，在制造诸如铜互连工艺的半导体器件时，蚀刻或灰化后除去抗蚀剂残留物和其它蚀刻残留物的效率提高，铜和绝缘膜的耐腐蚀性也得到改善。

公开(公告)号：US20060278936A1

公开(公告)日：2006-12-14

申请号：US11444216

申请日：2006-05-30

申请人： Kenichi Fujii ,  Masahiko Higashi

发明人： Kenichi Fujii ,  Masahiko Higashi

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/26513 ,  H01L21/74 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/66833

摘要： There are provided a semiconductor device and a fabrication method therefor including an ONO film (18) formed on a semiconductor substrate (10), a word line (24) formed on the ONO film (18), a bit line (20) formed in the semiconductor substrate (10), and a conductive layer (32) that is in contact with the bit line (20), runs in a length direction of the bit line (20), and includes a polysilicon layer or a metal layer. In accordance with the present invention, a semiconductor device and a fabrication method therefor are provided wherein degradation of the writing and erasing characteristics and degradation of the transistor characteristics such as a junction leakage are suppressed, and the bit line resistance is decreased.

摘要翻译： 提供了一种半导体器件及其制造方法，其包括形成在半导体衬底（10）上的ONO膜（18），形成在ONO膜（18）上的字线（24），形成在 半导体衬底（10）和与位线（20）接触的导电层（32）在位线（20）的长度方向上延伸，并且包括多晶硅层或金属层。 根据本发明，提供一种半导体器件及其制造方法，其中抑制了写入和擦除特性的劣化以及诸如结漏电的晶体管特性的劣化，并且位线电阻降低。

公开(公告)号：US20060228899A1

公开(公告)日：2006-10-12

申请号：US11441237

申请日：2006-05-26

申请人： Hiroyuki Nansei ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Hiroyuki Nansei ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/31 ,  H01L21/336

CPC分类号： H01L21/0234 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3145 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  Y10S438/954

摘要： After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.

公开(公告)号：US20060214218A1

公开(公告)日：2006-09-28

申请号：US11258823

申请日：2005-10-25

申请人： Kiyokazu Shishido ,  Masahiko Higashi ,  Minh Ngo ,  Angela Hui ,  Wenmei Li ,  Ning Cheng ,  Mark Ramsbey ,  Hirokazu Tokuno ,  Pei-Yuan Gao ,  Takayuki Enda

发明人： Kiyokazu Shishido ,  Masahiko Higashi ,  Minh Ngo ,  Angela Hui ,  Wenmei Li ,  Ning Cheng ,  Mark Ramsbey ,  Hirokazu Tokuno ,  Pei-Yuan Gao ,  Takayuki Enda

IPC分类号： H01L29/792

CPC分类号： H01L21/76801 ,  H01L21/02129 ,  H01L21/022 ,  H01L21/3144 ,  H01L21/31625 ,  H01L21/76829 ,  H01L27/11568 ,  H01L29/40117 ,  H01L29/513

摘要： A semiconductor device includes a semiconductor substrate, an ONO film that is provided on the semiconductor substrate and has a contact hole, and an interlayer insulating film that is provided directly on the ONO film and contains phosphorus. The interlayer insulating film contains 4.5 wt % of phosphorus or more in an interface portion that interfaces with the ONO film. The interlayer insulating film comprises a first portion that contacts the ONO film, and a second portion provided on the first portion. The first portion has a phosphorus concentration more than that of the second portion.

摘要翻译： 半导体器件包括半导体衬底，设置在半导体衬底上并具有接触孔的ONO膜，以及直接设置在ONO膜上并含有磷的层间绝缘膜。 在与ONO膜接合的界面部分中，层间绝缘膜含有4.5重量％以上的磷。 层间绝缘膜包括接触ONO膜的第一部分和设置在第一部分上的第二部分。 第一部分的磷浓度大于第二部分的磷浓度。

公开(公告)号：US07098147B2

公开(公告)日：2006-08-29

申请号：US10643967

申请日：2003-08-20

申请人： Hiroyuki Nansei ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Hiroyuki Nansei ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/31

CPC分类号： H01L27/11568 ,  H01L21/3145 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  Y10S438/954

摘要： After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.

摘要翻译： 在硅区域上形成下部氧化硅膜之后，通过例如热CVD法在下部氧化硅膜上形成硅膜。 随后，通过等离子体氮化方法将硅膜完全氮化，由氮化硅膜代替。 随后，通过等离子体氧化方法氧化氮化硅膜的表面层，以被上部氧化硅膜代替。 形成作为由下部氧化硅膜，氮化硅膜和上部氧化硅膜构成的多层绝缘膜的ONO膜。