发明申请
- 专利标题： Method of Inhibiting Photoresist Pattern Collapse
- 专利标题（中）： 抑制光刻胶图案折叠的方法
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申请号： US11746202申请日： 2007-05-09
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公开(公告)号： US20070264594A1公开(公告)日： 2007-11-15
- 发明人: Ching-Yu Chang , Heng-Jen Lee , Chin-Hsiang Lin , Hua-Tai Lin , Kuei Shun Chen , Bang-Chein Ho , Li-Kong Turn , Hung-Jui Kuo , Ko-Bin Kao , Tsung-Chih Chien
- 申请人： Ching-Yu Chang , Heng-Jen Lee , Chin-Hsiang Lin , Hua-Tai Lin , Kuei Shun Chen , Bang-Chein Ho , Li-Kong Turn , Hung-Jui Kuo , Ko-Bin Kao , Tsung-Chih Chien
- 主分类号： G03F7/40
- IPC分类号： G03F7/40
摘要：
A method of inhibiting photoresist pattern collapse which includes the steps of providing a substrate; providing a photoresist layer on the substrate; exposing and developing the photoresist layer; applying a top anti-reflective coating layer to the photoresist layer; rinsing the photoresist layer; and drying the photoresist layer.
公开/授权文献
- US08101340B2 Method of inhibiting photoresist pattern collapse 公开/授权日：2012-01-24
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