发明申请
US20070265478A1 DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS AND PREPARATION METHOD THEREOF
有权
用于半导体工艺的干式气体及其制备方法
- 专利标题: DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS AND PREPARATION METHOD THEREOF
- 专利标题(中): 用于半导体工艺的干式气体及其制备方法
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申请号: US11535035申请日: 2006-09-25
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公开(公告)号: US20070265478A1公开(公告)日: 2007-11-15
- 发明人: Hae Seok JI , Ook Jae Cho , Jae Gug Ryu , Jong Yeol Yang , Young Hoon Ahn , Bong Suk Kim , Dong Hyun Kim
- 申请人: Hae Seok JI , Ook Jae Cho , Jae Gug Ryu , Jong Yeol Yang , Young Hoon Ahn , Bong Suk Kim , Dong Hyun Kim
- 申请人地址: KR Nam-ku
- 专利权人: ULSAN CHEMICAL Co., Ltd.
- 当前专利权人: ULSAN CHEMICAL Co., Ltd.
- 当前专利权人地址: KR Nam-ku
- 优先权: KR10-2006-0041370 20060509
- 主分类号: C07C17/20
- IPC分类号: C07C17/20
摘要:
The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.
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