DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS AND PREPARATION METHOD THEREOF
    1.
    发明申请
    DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS AND PREPARATION METHOD THEREOF 有权
    用于半导体工艺的干式气体及其制备方法

    公开(公告)号:US20070265478A1

    公开(公告)日:2007-11-15

    申请号:US11535035

    申请日:2006-09-25

    IPC分类号: C07C17/20

    摘要: The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.

    摘要翻译: 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。

    DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS
    2.
    发明申请
    DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS 审中-公开
    用于半导体工艺的干蚀气体

    公开(公告)号:US20080203353A1

    公开(公告)日:2008-08-28

    申请号:US12013975

    申请日:2008-01-14

    IPC分类号: C09K13/00

    摘要: The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.

    摘要翻译: 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。

    Dry-etching gas for semiconductor process and preparation method thereof
    3.
    发明授权
    Dry-etching gas for semiconductor process and preparation method thereof 有权
    用于半导体工艺的干蚀刻气体及其制备方法

    公开(公告)号:US07319174B2

    公开(公告)日:2008-01-15

    申请号:US11535035

    申请日:2006-09-25

    IPC分类号: C07C17/20 C09K13/00

    摘要: The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.

    摘要翻译: 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。

    Remote controller having echo function
    4.
    发明授权
    Remote controller having echo function 失效
    遥控器具有回波功能

    公开(公告)号:US08036413B2

    公开(公告)日:2011-10-11

    申请号:US11912761

    申请日:2006-04-24

    申请人: Bong Suk Kim

    发明人: Bong Suk Kim

    IPC分类号: H04R25/00

    CPC分类号: G08C19/00

    摘要: A remote controller having an echo function is disclosed, which comprises an echo circuit which includes an echo IC and an echo volume switch, with the echo IC being designed to amplify and circulate voice signals for generating echo, and with the echo circuit being connected with the microphone driving unit, the voice amplifier and the mixer circuit, respectively. In the remote controller, a user's voice and an external sound from an audio apparatus are outputted based on an echo effect when a user practices language or singing.

    摘要翻译: 公开了一种具有回波功能的遥控器,其包括回波电路,该回波电路包括回波IC和回波音量开关,回波IC被设计成放大和循环用于产生回波的声音信号,并且回波电路与 麦克风驱动单元,语音放大器和混频器电路。 在遥控器中,当用户练习语言或歌唱时,基于回音效果输出来自音频设备的用户声音和外部声音。