发明申请
US20070266928A1 Method of growing group III nitride crystal, group III nitride crystal grown thereby, group III nitride crystal growing apparatus and semiconductor device
有权
生长III族氮化物晶体，由此生长的III族氮化物晶体，III族氮化物晶体生长装置和半导体器件的方法
- 专利标题： Method of growing group III nitride crystal, group III nitride crystal grown thereby, group III nitride crystal growing apparatus and semiconductor device
- 专利标题（中）： 生长III族氮化物晶体，由此生长的III族氮化物晶体，III族氮化物晶体生长装置和半导体器件的方法
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申请号： US11878125申请日： 2007-07-20
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公开(公告)号： US20070266928A1公开(公告)日： 2007-11-22
- 发明人: Hirokazu Iwata , Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masato Aoki
- 申请人： Hirokazu Iwata , Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masato Aoki
- 优先权： JP2003-019716 20030129; JP2003-071302 20030317; JP2003-081836 20030325; JP2004-011536 20040120; JP2004-012906 20040121; JP2004-013562 20040121
- 主分类号： C30B1/04
- IPC分类号： C30B1/04
摘要：
A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.
公开/授权文献
- US07828896B2 Methods of growing a group III nitride crystal 公开/授权日：2010-11-09
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