发明申请
- 专利标题： Methods of fabricating image sensors and image sensors fabricated thereby
- 专利标题（中）： 制造图像传感器和图像传感器的方法
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申请号： US11798704申请日： 2007-05-16
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公开(公告)号： US20070267666A1公开(公告)日： 2007-11-22
- 发明人: Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
- 申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
- 专利权人： SAMSUNG ELECTRONICS CO., LTD
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD
- 优先权： KR10-2006-0044372 20060517
- 主分类号： H01L31/113
- IPC分类号： H01L31/113 ; H01L21/00
摘要：
A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
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