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公开(公告)号：US20070161140A1
公开(公告)日：2007-07-12
申请号：US11651542
申请日：2007-01-10
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
摘要翻译： 示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。 示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成 在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。
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公开(公告)号：US20110204468A1
公开(公告)日：2011-08-25
申请号：US13064914
申请日：2011-04-26
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
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3.发明申请公开(公告)号：US20110163362A1
公开(公告)日：2011-07-07
申请号：US13064176
申请日：2011-03-09
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L31/14
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
摘要翻译： 制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。 图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。
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4.发明授权公开(公告)号：US08624310B2
公开(公告)日：2014-01-07
申请号：US13064176
申请日：2011-03-09
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L29/06
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
摘要翻译： 制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。 图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。
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公开(公告)号：US07955924B2
公开(公告)日：2011-06-07
申请号：US11651542
申请日：2007-01-10
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L21/8238
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
摘要翻译： 示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。 示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成 在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。
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公开(公告)号：US07927902B2
公开(公告)日：2011-04-19
申请号：US11798704
申请日：2007-05-16
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
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7.发明申请公开(公告)号：US20070267666A1
公开(公告)日：2007-11-22
申请号：US11798704
申请日：2007-05-16
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
摘要翻译： 制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。 图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。
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8.发明授权Genetically engineered recombinant Escherichia coli producing L-tryptophan having originally L-phenylalanine productivity, and method for producing L-tryptophan using the microorganism 有权生产L-苯丙氨酸生产力的基因工程重组大肠杆菌生产L-色氨酸，以及使用该微生物生产L-色氨酸的方法公开(公告)号：US08945907B2
公开(公告)日：2015-02-03
申请号：US12520350
申请日：2007-12-28
申请人： Jae-yeong Ju , Hyang Choi , Eun-sung Koh , Ji-sun Lee , Jin-ho Lee , So-young Kim , Chang-hyun Jin , Young-hoon Park
发明人： Jae-yeong Ju , Hyang Choi , Eun-sung Koh , Ji-sun Lee , Jin-ho Lee , So-young Kim , Chang-hyun Jin , Young-hoon Park
CPC分类号： C12P13/227 , C12N9/88 , C12N15/52
摘要： The present invention relates to a microorganism having L-tryptophan productivity and a method for producing L-tryptophan using the same. More precisely, the present invention relates to the recombinant E. coli strain CJ600 (KCCM 10812P) having tryptophan productivity produced from the mutant form (KFCC 10066) of E. coli having L-phenylalanine productivity, wherein tryptophan auxotrophy is released, L-phenylalanine biosynthesis is blocked but tryptophan productivity is enhanced by reinforcing the gene involved in tryptophan biosynthesis, and a method of producing L-tryptophan using the same.
摘要翻译： 本发明涉及具有L-色氨酸生产力的微生物和使用其的L-色氨酸的生产方法。 更准确地说，本发明涉及由具有L-苯丙氨酸生产力的大肠杆菌的突变形式（KFCC 10066）产生的具有色氨酸生产力的重组大肠杆菌菌株CJ600（KCCM 10812P），其中色氨酸营养缺陷型被释放，L-苯丙氨酸 生物合成被阻断，但通过加强色氨酸生物合成中涉及的基因来增强色氨酸的生产力，以及使用其生产L-色氨酸的方法。
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9.发明授权Microorganism of Corynebacterium genus having enhanced L-lysine productivity and a method of producing L-lysine using the same 有权具有增强的L-赖氨酸生产力的棒状杆菌属的微生物和使用其产生L-赖氨酸的方法公开(公告)号：US08048650B2
公开(公告)日：2011-11-01
申请号：US12518578
申请日：2007-12-28
申请人： Hyun-min Koo , Young-lyeol Yang , Hyo-jin Kim , Jun-ok Moon , Sang-jo Lim , Jong-soo Choi , Young-hoon Park
发明人： Hyun-min Koo , Young-lyeol Yang , Hyo-jin Kim , Jun-ok Moon , Sang-jo Lim , Jong-soo Choi , Young-hoon Park
CPC分类号： C12P13/08
摘要： The present invention relates to a microorganism of Corynebacterium genus having enhanced L-lysine productivity and a method of producing L-lysine using the same. More particularly, the present invention relates to a recombinant microorganism of Corynebacterium genus having enhanced L-lysine productivity by inactivating endogenous NCgI 1090 gene having the amino acid sequence containing repeated aspartate residues and a method of producing L-lysine using the same.
摘要翻译： 本发明涉及具有增强的L-赖氨酸生产力的棒状杆菌属微生物和使用其的L-赖氨酸生产方法。 更具体地说，本发明涉及通过使具有含有重复天冬氨酸残基的氨基酸序列的内源NCgI1090基因失活而具有增强的L-赖氨酸生产力的棒状杆菌属的重组微生物和使用其的L-赖氨酸的制备方法。
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10.发明申请Escherichia Strain Capable of Converting Xmp to Gmp and Maintaining the Inactivated State of Gene(s) Associated with Gmp Degradation and Methods of Using the Same 有权能够将Xmp转化为Gmp并维持与Gmp降解有关的基因失活状态的大肠杆菌菌株及其使用方法公开(公告)号：US20080299620A1
公开(公告)日：2008-12-04
申请号：US11814417
申请日：2006-01-20
申请人： Young-hoon Park , Hyoung-suk Kim , Jin-nam Lee , Ki-hoon Oh , Jeong-hwan Kim , Yoon-suk Oh , Jae-ick Sim , Kyung-oh Choi
发明人： Young-hoon Park , Hyoung-suk Kim , Jin-nam Lee , Ki-hoon Oh , Jeong-hwan Kim , Yoon-suk Oh , Jae-ick Sim , Kyung-oh Choi
CPC分类号： C12N9/16 , C12N9/1077 , C12P19/32 , C12R1/19
摘要： Provided are mutant strains derived from Escherichia sp. GPU1114 (Accession No. KCCM-10536), having cumulative inactivation of deoD, aphA, appA, and hprt genes, and methods of using the same.
摘要翻译： 提供源自大肠杆菌属的突变菌株。 具有deoD，aphA，appA和hprt基因的累积失活的GPU1114（登录号KCCM-10536）及其使用方法。
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