The formation of a resist pattern with high resolution using liquid immersion lithography, while concurrently preventing deterioration of the resist film during the liquid immersion lithography and deterioration of the used liquid itself, is possible through the use of a liquid which can be suitably used in a liquid lithography process in which the above resist film is exposed while being intervened by a liquid having a predetermined thickness and refractive index higher than air on at least a resist film on a route of allowing lithographic exposure light to reach to the resist film, thereby improving the resolution of a resist pattern. A liquid composed of a fluorine-based solvent that has a lowered hydrogen atomic concentration and exhibits sufficient transparency for the exposure light having a wavelength of no more than 200 nm employed in the exposure process, and that has a boiling point of 70 to 270° C., is used as an immersion liquid in liquid immersion lithography.