公开(公告)号：US09244358B2

公开(公告)日：2016-01-26

申请号：US13123341

申请日：2009-09-15

申请人： Jun Koshiyama ,  Kazumasa Wakiya

发明人： Jun Koshiyama ,  Kazumasa Wakiya

IPC分类号： C09K3/18 ,  G03F7/40 ,  H01L23/29 ,  G03F7/16 ,  H01L21/306 ,  G03F7/20

CPC分类号： G03F7/405 ,  C09K3/18 ,  G03F7/16 ,  G03F7/2041 ,  H01L21/306 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.

摘要翻译： 公开了一种表面处理液体，其能够简单且有效地对基材进行疏水化，并防止树脂图案或蚀刻图案的塌陷。 还公开了使用表面处理液的表面处理方法，使用表面处理液的疏水化方法和疏水化基材。 当底物被疏水化时，用含有甲硅烷基化剂和烃类非极性溶剂的表面处理液涂覆基材。 当防止图案塌陷时，通过使用含有甲硅烷基化剂和溶剂的表面处理液对通过蚀刻形成在基板上形成的树脂图案的表面或蚀刻图案进行处理。

公开(公告)号：US08367312B2

公开(公告)日：2013-02-05

申请号：US12087545

申请日：2006-12-08

申请人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

发明人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

IPC分类号： C11D7/32 ,  C11D1/75

CPC分类号： G03F7/322

摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.

摘要翻译： 含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。 然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。 提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。 这种洗涤剂即使在低浓度时也保持低的表面张力。 有效抑制图形下降和缺陷发生。 它也可以抑制抗蚀剂图案的波动。

公开(公告)号：US20100248477A1

公开(公告)日：2010-09-30

申请号：US12801452

申请日：2010-06-09

申请人： Shigeru Yokoi ,  Kazumasa Wakiya

发明人： Shigeru Yokoi ,  Kazumasa Wakiya

IPC分类号： H01L21/306 ,  C11D3/26

CPC分类号： H01L21/31144 ,  C11D7/32 ,  C11D11/0047 ,  H01L21/31138 ,  H01L21/76807

摘要： It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water. The cleaning liquid attains in a well balanced manner such effects that a sacrifice layer used for forming a dual damascene structure is excellently removed, and a low dielectric layer is not damaged upon formation of a metallic wiring on a substrate having a metallic layer (such as a Cu layer) and the low dielectric layer formed thereon.

摘要翻译： 公开了一种用于形成双镶嵌结构的方法中使用的清洗液，包括以下步骤：蚀刻积聚在其上具有金属层的基底上的低介电层（低k层），以形成第一蚀刻空间; 在第一蚀刻空间中填充牺牲层; 部分地蚀刻低介电层和牺牲层以形成连接到第一蚀刻空间的第二蚀刻空间; 并用清洗液除去残留在第一蚀刻空间中的牺牲层，其中清洗液包含（a）1-25质量％的季铵氢氧化物，如TMAH和胆碱（b），30-70质量％ 水溶性有机溶剂，（c）20〜60质量％的水。 清洗液以良好平衡的方式达到这样的效果，即用于形成双镶嵌结构的牺牲层被极好地去除，并且在具有金属层的基底上形成金属布线时，低介电层不被损坏（例如 Cu层）和形成在其上的低电介质层。

公开(公告)号：US20100056411A1

公开(公告)日：2010-03-04

申请号：US12591048

申请日：2009-11-05

申请人： Takayuki Haraguchi ,  Kazumasa Wakiya ,  Shigeru Yokoi

发明人： Takayuki Haraguchi ,  Kazumasa Wakiya ,  Shigeru Yokoi

IPC分类号： G03F7/42

CPC分类号： H01L21/31133 ,  G03F7/423

摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.

摘要翻译： 公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液 剥离光致抗蚀剂。

公开(公告)号：US20100035177A1

公开(公告)日：2010-02-11

申请号：US12443118

申请日：2007-09-13

申请人： Kiyoshi Ishikawa ,  Jun Koshiyama ,  Kazumasa Wakiya

发明人： Kiyoshi Ishikawa ,  Jun Koshiyama ,  Kazumasa Wakiya

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/0338 ,  Y10S430/128

摘要： A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).

摘要翻译： 提供一种用于形成能够减少双重图案化工艺中的台阶数的图案的新颖方法和用于形成图案的方法中适当使用的涂膜形成材料。 通过在支撑体（1）上涂覆第一化学放大抗蚀剂组合物形成第一抗蚀剂膜（2），从而形成膜被选择性地曝光并显影以形成多个第一抗蚀剂图案（3）。 接下来，通过分别形成由水溶性树脂膜构成的涂膜（4），在第一抗蚀剂图案（3）的表面上形成多个涂布图案（5）。 此外，在其上形成有涂层图案（5）的支撑体（1）上施加第二化学放大抗蚀剂组合物以形成第二抗蚀剂膜（6），其被选择性地暴露和显影以形成多个第二抗蚀剂图案（7）。 因此，在支撑体（1）上形成包括涂布图案（5）和第二抗蚀图案（7）的图案。

公开(公告)号：US20080242575A1

公开(公告)日：2008-10-02

申请号：US12155386

申请日：2008-06-03

申请人： Takayuki Haraguchi ,  Kazumasa Wakiya ,  Shigeru Yokoi

发明人： Takayuki Haraguchi ,  Kazumasa Wakiya ,  Shigeru Yokoi

IPC分类号： G03F7/42

CPC分类号： H01L21/31133 ,  G03F7/423

摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.

摘要翻译： 公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液 剥离光致抗蚀剂。

公开(公告)号：US07371510B2

公开(公告)日：2008-05-13

申请号：US11702602

申请日：2007-02-06

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03F7/11 ,  G03F7/20 ,  G03F7/207

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

公开(公告)号：US20080096141A1

公开(公告)日：2008-04-24

申请号：US11791723

申请日：2005-11-29

申请人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Atsushi Miyamoto ,  Hidekazu Tajima

发明人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Atsushi Miyamoto ,  Hidekazu Tajima

IPC分类号： G03C5/56 ,  G03C11/00

CPC分类号： G03F7/40

摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.

摘要翻译： 本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力 抑制图案收缩。 此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。 用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8至20个碳原子的烷基或羟烷基; R 2和R 3代表具有1至5个碳原子的烷基或羟烷基。

公开(公告)号：US20070269751A1

公开(公告)日：2007-11-22

申请号：US11661871

申请日：2005-08-18

申请人： Kazumasa Wakiya

发明人： Kazumasa Wakiya

IPC分类号： H01L21/027 ,  G03F7/20 ,  G03F7/38

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： The formation of a resist pattern with high resolution using liquid immersion lithography, while concurrently preventing deterioration of the resist film during the liquid immersion lithography and deterioration of the used liquid itself, is possible through the use of a liquid which can be suitably used in a liquid lithography process in which the above resist film is exposed while being intervened by a liquid having a predetermined thickness and refractive index higher than air on at least a resist film on a route of allowing lithographic exposure light to reach to the resist film, thereby improving the resolution of a resist pattern. A liquid composed of a fluorine-based solvent that has a lowered hydrogen atomic concentration and exhibits sufficient transparency for the exposure light having a wavelength of no more than 200 nm employed in the exposure process, and that has a boiling point of 70 to 270° C., is used as an immersion liquid in liquid immersion lithography.

摘要翻译： 使用液浸光刻法形成具有高分辨率的抗蚀剂图案，同时防止液浸光刻中的抗蚀剂膜的劣化和废液本身的劣化，可以通过使用可适用于 在允许光刻曝光光到达抗蚀剂膜的路线上，至少在抗蚀剂膜上具有预定厚度和比空气高的折射率的液体进行介质曝光的上述抗蚀剂膜的液晶光刻工艺，从而改善 抗蚀剂图案的分辨率。 由曝光工序中使用的具有不超过200nm的波长的曝光用光，氢原子浓度降低且具有足够透明度的氟系溶剂构成的液体，沸点为70〜270℃ C.在液浸光刻中用作浸液。

公开(公告)号：US20070004933A1

公开(公告)日：2007-01-04

申请号：US11516562

申请日：2006-09-07

申请人： Kazumasa Wakiya ,  Shigeru Yokoi

发明人： Kazumasa Wakiya ,  Shigeru Yokoi

IPC分类号： C07C305/00

CPC分类号： H01L21/02068 ,  C11D1/62 ,  C11D7/32 ,  C11D11/0047 ,  G03F7/425 ,  G03F7/426

摘要： A photoresist stripping solution comprising (a) a specified quaternary ammonium hydroxide, such as tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, methyltributylammonium hydroxide or methyltripropylammonium hydroxide, (b) a water-soluble amine, (c) water, (d) a corrosion inhibitor and (e) a water-soluble organic solvent, the compounding ratio of component (a) to component (b) being in the range of from 1:3 to 1:10 by mass, as well as a method of stripping photoresists using the solution. The stripping solution of the invention assures effective protection of Al, Cu and other wiring metal conductors against corroding as well as efficient stripping of the photoresist film, post-ashing residues such as modified photoresist film and metal depositions. It also assures efficient stripping of Si-based residues and effective protection of the substrate (particularly the reverse side of a Si substrate) from corroding.

摘要翻译： 一种光致抗蚀剂剥离溶液，其包含（a）特定的季铵氢氧化物，例如氢氧化四丁基铵，氢氧化四丙铵，氢氧化甲基三丁基铵或甲基三氢丙基氢氧化铵，（b）水溶性胺，（c）水，（d）腐蚀抑制剂和（ e）水溶性有机溶剂，组分（a）与组分（b）的混合比例在1:3至1:10的范围内，以及使用溶液剥离光致抗蚀剂的方法。 本发明的剥离溶液确保有效保护Al，Cu和其它布线金属导体免受腐蚀以及光致抗蚀剂膜的有效剥离，后灰化残留物如修饰的光致抗蚀剂膜和金属沉积。 它还确保有效剥离Si基残留物并有效保护基材（特别是Si基板的反面）免受腐蚀。