发明申请
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11797588申请日： 2007-05-04
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公开(公告)号： US20070269972A1公开(公告)日： 2007-11-22
- 发明人: Yoshiyuki Kawashima , Yasushi Ishii , Koichi Toba , Satoru Machida , Takashi Hashimoto
- 申请人： Yoshiyuki Kawashima , Yasushi Ishii , Koichi Toba , Satoru Machida , Takashi Hashimoto
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 优先权： JP2006-141460 20060522
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Provided is a method of manufacturing a semiconductor device having an ONO film composed of a bottom silicon oxide film, a silicon nitride film and a top silicon oxide film over a substrate. The top silicon oxide film of the ONO film is formed in the following manner. A silicon oxide film is formed over the silicon nitride film, and then a hydrogen gas and an oxygen gas are reacted over the silicon nitride film by heating the silicon nitride film (substrate) while reducing the pressure from the atmospheric pressure to grow the silicon oxide film into the top silicon oxide film. According to the present invention, a silicon oxide film having good uniformity and fewer defects can be formed over a silicon-containing underlayer.
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