发明申请
US20070269974A1 METHODS FOR FORMING A METAL CONTACT IN A SEMICONDUCTOR DEVICE IN WHICH AN OHMIC LAYER IS FORMED WHILE FORMING A BARRIER METAL LAYER
审中-公开
在半导体器件中形成金属接触的方法，其中在形成障碍金属层时形成OHMIC层
- 专利标题： METHODS FOR FORMING A METAL CONTACT IN A SEMICONDUCTOR DEVICE IN WHICH AN OHMIC LAYER IS FORMED WHILE FORMING A BARRIER METAL LAYER
- 专利标题（中）： 在半导体器件中形成金属接触的方法，其中在形成障碍金属层时形成OHMIC层
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申请号： US11754639申请日： 2007-05-29
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公开(公告)号： US20070269974A1公开(公告)日： 2007-11-22
- 发明人: Hee-sook Park , Gil-heyun Choi , Sang-bum Kang , Seong-geon Park , Kwang-jin Moon
- 申请人： Hee-sook Park , Gil-heyun Choi , Sang-bum Kang , Seong-geon Park , Kwang-jin Moon
- 优先权： KR2002-50072 20020823
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon layer. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.
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