发明申请
- 专利标题: Charged particle beam apparatus and pattern measuring method
- 专利标题(中): 带电粒子束装置和图案测量方法
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申请号: US11704227申请日: 2007-02-09
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公开(公告)号: US20070272858A1公开(公告)日: 2007-11-29
- 发明人: Sayaka Tanimoto , Hiromasa Yamanashi , Muneyuki Fukuda , Yasunari Sohda
- 申请人: Sayaka Tanimoto , Hiromasa Yamanashi , Muneyuki Fukuda , Yasunari Sohda
- 优先权: JP2006-090125 20060329
- 主分类号: G01N23/22
- IPC分类号: G01N23/22
摘要:
It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.