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公开(公告)号：US07655907B2
公开(公告)日：2010-02-02
申请号：US11704227
申请日：2007-02-09
IPC分类号： H01J37/26
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/04735 , H01J2237/216 , H01J2237/2817
摘要： It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.
摘要翻译： 它是提供一种能够通过初级带电粒子束快速处理衬底上许多测量点的技术。 在控制系统中，对于晶片上的每个测量点（初级带电粒子束的照射位置），计算器获得从相对测量点的表面电位分布函数获得的相关测量点的表面电位的概率， 并存储在数据存储单元中。 基于概率，计算器确定相关测量点处的带电粒子光学器件的设定参数（例如延迟电压）的幅度。 然后，计算器通过在确定的幅度的范围内改变设定参数来检查主要带电粒子束的聚焦状态，并确定要用于测量的设定参数。
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2.发明授权公开(公告)号：US07679056B2
公开(公告)日：2010-03-16
申请号：US11687002
申请日：2007-03-16
CPC分类号： G01N23/2258 , H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/0047 , H01J2237/204 , H01J2237/221 , H01J2237/2817 , H01L21/67207 , H01L21/67253
摘要： The present invention provides a pattern inspection technique that enables measurement and inspection of a fine pattern by a charged particle beam to be performed with high throughput. A metrology system of fine pattern according to the pattern inspection technique has: a the column that includes a charged particle source, an electron optics for scanning a desired observation area on a sample with a charged particle beam emitted from the charged particle source, and a detector for detecting charged particles generated secondarily from the sample scanned by the charged particle beam; information processing means for measuring information about geometry of a pattern formed on the sample based on information on the intensity of the charged particles obtained by the detector; and a sample introduction unit for introducing the sample into the inside of the column; wherein a charge neutralizer unit for generating ions and charge neutralizing the sample with the ions and surface potential measuring means for measuring a surface potential of the sample surface are provided on a path that is inside the sample introduction unit and transports the sample to the column.
摘要翻译： 本发明提供一种图案检查技术，其能够通过以高产量进行的带电粒子束来测量和检查精细图案。 根据图案检查技术的精细图案的计量系统具有：包括带电粒子源的列，用于从带电粒子源发射的带电粒子束扫描样品上的期望观察区域的电子光学器件，以及 检测器，用于检测由带电粒子束扫描的样品二次产生的带电粒子; 信息处理装置，用于根据关于由检测器获得的带电粒子的强度的信息来测量关于样品上形成的图案的几何形状的信息; 以及用于将样品引入柱内的样品引入单元; 其中，用于产生离子的电荷中和装置，用于测量样品表面电位的表面电位测量装置的离子和表面电位测量装置，并在样品引入单元内部的路径上传送样品至柱。
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公开(公告)号：US20070272858A1
公开(公告)日：2007-11-29
申请号：US11704227
申请日：2007-02-09
IPC分类号： G01N23/22
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/04735 , H01J2237/216 , H01J2237/2817
摘要： It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.
摘要翻译： 它是提供一种能够通过初级带电粒子束快速处理衬底上许多测量点的技术。 在控制系统中，对于晶片上的每个测量点（初级带电粒子束的照射位置），计算器获得从相对测量点的表面电位分布函数获得的相关测量点的表面电位的概率， 并存储在数据存储单元中。 基于概率，计算器确定相关测量点处的带电粒子光学器件的设定参数（例如延迟电压）的幅度。 然后，计算器通过在确定的幅度的范围内改变设定参数来检查主要带电粒子束的聚焦状态，并确定要用于测量的设定参数。
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4.发明申请公开(公告)号：US20070221844A1
公开(公告)日：2007-09-27
申请号：US11687002
申请日：2007-03-16
CPC分类号： G01N23/2258 , H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/0047 , H01J2237/204 , H01J2237/221 , H01J2237/2817 , H01L21/67207 , H01L21/67253
摘要： The present invention provides a pattern inspection technique that enables measurement and inspection of a fine pattern by a charged particle beam to be performed with high throughput. A metrology system of fine pattern according to the pattern inspection technique has: a the column that includes a charged particle source, an electron optics for scanning a desired observation area on a sample with a charged particle beam emitted from the charged particle source, and a detector for detecting charged particles generated secondarily from the sample scanned by the charged particle beam; information processing means for measuring information about geometry of a pattern formed on the sample based on information on the intensity of the charged particles obtained by the detector; and a sample introduction unit for introducing the sample into the inside of the column; wherein a charge neutralizer unit for generating ions and charge neutralizing the sample with the ions and surface potential measuring means for measuring a surface potential of the sample surface are provided on a path that is inside the sample introduction unit and transports the sample to the column.
摘要翻译： 本发明提供一种图案检查技术，其能够通过以高产量进行的带电粒子束来测量和检查精细图案。 根据图案检查技术的精细图案的计量系统具有：包括带电粒子源的列，用于从带电粒子源发射的带电粒子束扫描样品上的期望观察区域的电子光学器件，以及 检测器，用于检测由带电粒子束扫描的样品二次产生的带电粒子; 信息处理装置，用于根据关于由检测器获得的带电粒子的强度的信息来测量关于样品上形成的图案的几何形状的信息; 以及用于将样品引入柱内的样品引入单元; 其中，用于产生离子的电荷中和装置，用于测量样品表面电位的表面电位测量装置的离子和表面电位测量装置，并在样品引入单元内部的路径上传送样品至柱。
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公开(公告)号：US08766183B2
公开(公告)日：2014-07-01
申请号：US13058712
申请日：2009-09-10
IPC分类号： H01J3/12 , H01J37/153
CPC分类号： H01J37/153 , H01J37/265 , H01J37/28 , H01J2237/004 , H01J2237/1532 , H01J2237/216 , H01J2237/221
摘要： The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction.
摘要翻译： 散光控制处理时间通过改善像散差测量精度而降低到1秒以下。 带电粒子束装置包括：加载样品的载物台; 将样品携带到舞台上的运送机构; 带电粒子束光学系统，其用带电粒子束照射台上的样品，并检测从样品产生的二次带电粒子; 以及控制器，其确定带电粒子束光学系统的设置参数并控制带电粒子束光学系统。 控制器注册并保持电子光学系统设置参数，用于照射来自样品上的法线的光束作为带电粒子束，比较通过倾斜光束获得的观察图像，测量移动量和移动方向， 从运动量和方向上矫正散光。
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公开(公告)号：US20110147586A1
公开(公告)日：2011-06-23
申请号：US13058712
申请日：2009-09-10
IPC分类号： H01J37/153 , G01N23/00
CPC分类号： H01J37/153 , H01J37/265 , H01J37/28 , H01J2237/004 , H01J2237/1532 , H01J2237/216 , H01J2237/221
摘要： The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction.
摘要翻译： 散光控制处理时间通过改善像散差测量精度而降低到1秒以下。 带电粒子束装置包括：加载样品的载物台; 将样品携带到舞台上的运送机构; 带电粒子束光学系统，其用带电粒子束照射台上的样品，并检测从样品产生的二次带电粒子; 以及控制器，其确定带电粒子束光学系统的设置参数并控制带电粒子束光学系统。 控制器注册并保持电子光学系统设置参数，用于用作为带电粒子束的样品上从法线上倾斜的光束照射，比较通过倾斜光束获得的观察图像，测量移动量和移动方向， 从运动量和方向上矫正散光。
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公开(公告)号：US20130175447A1
公开(公告)日：2013-07-11
申请号：US13812451
申请日：2011-08-26
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/153 , H01J2237/1506 , H01J2237/1532 , H01J2237/2826
摘要： Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).
摘要翻译： 本发明提供一种扫描电子显微镜，其配备有当由电子束柱产生的散光和从测量样品的周围产生的散光存在时使用的高速和高精度散光测量装置。 该扫描电子显微镜的特征在于以高速和高精度控制像散校正器（201），以通过使用从改变后获得的二维图像的质量获得散光的方法来校正像散 散光校正器（201）的强度，以及根据使用倾斜偏转器（202）使电子束倾斜时发生的电子束的位置偏移的变化来测量像散的方法。
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公开(公告)号：US08026482B2
公开(公告)日：2011-09-27
申请号：US12142284
申请日：2008-06-19
CPC分类号： H01J37/28 , H01J37/026 , H01J37/265 , H01J2237/24564
摘要： Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.
摘要翻译： 实际上测量半导体晶片13的直径上的多个点上的电位。 然后，通过在直径方向上相邻的实测点之间的电位的样条插值来获得直径上的电位分布。 此后，通过对在半导体晶片13的中心周围的圆周方向相邻的点之间的电位进行样条插补，获得关于半导体晶片13中的电位分布的二维内插函数。然后，在 通过将该观察点的坐标值代入二维插值函数来获得半导体晶片13。 结果，可以精确地估计由于晶片带电引起的电位分布，并且可以将延迟电位设置为适当的值。
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公开(公告)号：US20130270435A1
公开(公告)日：2013-10-17
申请号：US13879051
申请日：2011-10-05
IPC分类号： H01J37/02
CPC分类号： H01J37/023 , H01J37/153 , H01J37/28 , H01J2237/1534
摘要： The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.
摘要翻译： 电子束装置包括电子源和物镜偏转器。 电子束装置基于通过投射的电子束从材料发射的二次电子等的信号获得图像。 电子束装置还包括偏置色差校正元件，该偏置色差校正元件还包括位于比物镜偏转器更靠近电子源的电磁偏转器和具有比电磁偏转器更窄的内径的静电偏转器， 在电磁偏转器内，使得材料的高度位置与电磁偏转器重叠，并且能够施加偏移电压。 因此，可以提供一种电子束装置，通过该电子束装置可以减轻由偏转引起的几何像差（寄生像差），并且在高分辨率的宽视角上实现偏转。
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公开(公告)号：US08735814B2
公开(公告)日：2014-05-27
申请号：US13879051
申请日：2011-10-05
CPC分类号： H01J37/023 , H01J37/153 , H01J37/28 , H01J2237/1534
摘要： The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.
摘要翻译： 电子束装置包括电子源和物镜偏转器。 电子束装置基于通过投射的电子束从材料发射的二次电子等的信号获得图像。 电子束装置还包括偏置色差校正元件，该偏置色差校正元件还包括位于比物镜偏转器更靠近电子源的电磁偏转器和具有比电磁偏转器更窄的内径的静电偏转器， 在电磁偏转器内，使得材料的高度位置与电磁偏转器重叠，并且能够施加偏移电压。 因此，可以提供一种电子束装置，通过该电子束装置可以减轻由偏转引起的几何像差（寄生像差），并且在高分辨率的宽视角上实现偏转。
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